H. Hartono < H. Hasegawa < H. Hashimoto

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 77.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
004186 (2010)		High-k Al2O3 MOS structures with Si interface control layer formed on air-exposed GaAs and InGaAs wafers
005D76 (2008)		Surface state density distribution at vacuum-annealed InP(1 0 0) surface as derived from the rigorous analysis of photoluminescence efficiency
007869 (2007)		Minority carrier diffusion lengths in MOVPE-grown n-and p-InGaN and performance of AlGaN/InGaN/GaN double heterojunction bipolar transistors
00CF04 (2003)		Rigorous analysis of the electronic properties of InP interfaces for gas sensing
00E158 (2002)		Rigorous analysis of photoluminescence efficiency for characterisation of electronic properties of InP(100) surfaces
00EC02 (2002)		Determination of InP surface state density distribution from excitation-power-dependent photoluminescence spectra using genetic algorithm-based fitting procedure
010078 (2001)		Process characterization and optimization for a novel oxide-free insulated gate structure for InP MISFETs having silicon interface control layer
010079 (2001)		Fabrication and characterization of InGaAs/InAlAs insulated gate pseudomorphic HEMTs having a silicon interface control layer
010669 (2001)		Influence of alloy composition on fillet-lifting phenomenon in tin binary alloys
010978 (2001)		Computer analysis of photoluminescence efficiency at InP surface with U-shaped surface state continuum
010E09 (2001)		A novel InGaAs/InAlAs insulated gate pseudomorphic HEMT with a silicon interface control layer showing high DC- and RF-performance
013183 (1999)		In-situ characterization technique of compound semiconductor heterostructure growth and device processing steps based on UHV contactless capacitance-voltage measurement
013185 (1999)		Growth of device quality InGaP/GaAs heterostructures by gas source molecular beam epitaxy using tertiarybutylphosphine
014251 (1999)		Formation of <001>-aligned nano-scale pores on (001) n-InP surfaces by photoelectrochemical anodization in HCl
014662 (1999)		Realization of InP-based InGaAs single electron transistors on wires and dots grown by selective MBE
015103 (1999)		Selective molecular beam epitaxy growth of quantum wire-dot coupled structures with novel high index facets for InGaAs single electron transistor arrays
015A02 (1998)		Formation of highly uniform InGaAs ridge quantum wires by selective molecular beam epitaxy on novel InP patterned substrates
015F15 (1998)		Novel wrap-gate-controlled single electron transistor formed on an InGaAs ridge quantum wire grown by selective MBE
015F16 (1998)		Direct formation of InGaAs coupled quantum wire-dot structures by selective molecular beam epitaxy on InP patterned substrates
017184 (1998)		Novel InP metal-insulator-semiconductor structure having an ultrathin silicon interface control layer
017235 (1998)		Electrochemical formation and characterization of Schottky in-plane and wrap gate structures for realization of GaAs- and InP-based quantum wires and dots

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