G. Wache < G. Wagner < G. Wakefield

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 39.
[0-20] [0 - 20][0 - 39][20-38][20-40]

Ident.	Authors (with country if any)	Title
005C02 (2008)		VLS growth of GaAs/(InGa)As/GaAs axial double-heterostructure nanowires by MOVPE
005C11 (2008)		Selective-area growth of GaAs and InAs nanowires-homo-and heteroepitaxy using SiNx templates
007886 (2007)		AIII-BV nano-and microtubes fabricated on (1 1 0)-oriented GaAs-and GaP-substrate using the metal-organic vapor-phase epitaxy
009400 (2005)		The two-phase region in 2(ZnSe)x(CuInSe2)1-x alloys and structural relation between the tetragonal and cubic phases
009924 (2005)		Extension of the two-phase field in the system 2(ZnS)x(CuInS2)1-x and structural relationship between the tetragonal and cubic phase
00A179 (2005)		Structure and phase relations of the Zn2x(CuIn)1-xS2 solid solution series
00F536 (2002)		Interband transitions in [001]-(GaP)1(InP)m superlattices
00F997 (2002-03-15)		Effective electron mass and phonon modes in n-type hexagonal InN
011F00 (2001-01-08)		Anisotropic dielectric function spectra from single-crystal CuInSe2 with orientation domains
011F74 (2001-01-01)		Band-gap energies, free carrier effects, and phonon modes in strained GaNAs/GaAs and GaNAs/InAs/GaAs superlattice heterostructures measured by spectroscopic ellipsometry
012007 (2000)		CuAu-I type ordering and orientation domains in tetragonal Zn2-2xCuxInxS2 films (0.78 ≤ x ≤ 1) crystallized on (001) gallium phosphide by pulsed laser deposition
013987 (2000)		Structural properties of thin Zn0.62Cu0.19In0.19S alloy films grown on Si(111) substrates by pulsed laser deposition
013C80 (2000)		Defect structure of monocrystalline (0 0 1)-oriented Zn0.62Cu0.19In0.19S films grown on GaP by pulsed laser deposition (PLD)
014A92 (1999)		Correlation between the surface morphology and antiphase boundaries in ordered (GaIn)P
014A95 (1999)		The film surface as the site for spontaneous nucleation of dislocation half-loops in strained heteroepitaxial systems
015889 (1998)		Surface characterization of ordered (GaIn)P
016721 (1998)		Misfit Strain relaxation by dislocations in InAs islands and layers epitaxially grown on (001)GaAs substrates by MOVPE
016D95 (1998)		Defect structure of strained heteroepitaxial In(1-x)Al(x)P layers deposited by MOVPE on (001) GaAs substrates
016E16 (1998)		InP monolayers inserted in a GaP matrix studied by spectroscopic ellipsometry
019F14 (1997)		MOVPE growth of spontaneously ordered (GaIn) and (AlIn)P layers lattice matched to GaAs substrates
019F17 (1997)		Calculation of displacement fields and simulation of HRTEM images of dislocations in sphalerite type A(III)B(V) compound semiconductors

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