D. Z. Gabruzov < D. Z. Garbuzov < D. Z. Grabko

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 49.
[0-20] [0 - 20][0 - 49][20-40]

Ident.	Authors (with country if any)	Title
00E631 (2002-10-21)		Room-temperature 2.5 μm InGaAsSb/AlGaAsSb diode lasers emitting 1 W continuous waves
010816 (2001-10-15)		Extraordinarily wide optical gain spectrum in 2.2-2.5 μm In(Al)GaAsSb/GaSb quantum-well ridge-waveguide lasers
013401 (1999)		2.3-2.7-μm room temperature CW operation of InGaAsSb-AlGaAsSb broad waveguide SCH-QW diode lasers
013862 (1999)		Direct measurements of heterobarrier leakage current and modal gain in 2.3 μm double QW p-substrate InGaAsSb/AlGaAsSb broad area lasers
013E24 (2000-01-17)		Continuous-wave operation of λ=3.25μm broadened-waveguide W quantum-well diode lasers up to T=195K
014F47 (1999-03-10)		Interfacial recombination in In(Al)GaAsSb/GaSb thermophotovoltaic cells
015A07 (1999-02-15)		InGaAsSb thermophotovoltaic diode: Physics evaluation
016A00 (1998-08-31)		High-power (>10 W) continuous-wave operation from 100-μm-aperture 0.97-μm-emitting Al-free diode lasers
017870 (1997)		High-power high-efficiency 0.98-μm wavelength InGaAs-(In)GaAs(P)-InGaP broadened waveguide lasers grown by gas-source molecular beam epitaxy
017E45 (1997-03-20)		Minority-carrier transport in InGaAsSb thermophotovoltaic diodes
018128 (1997-09-01)		14.3 W quasicontinuous wave front-facet power from broad-waveguide Al-free 970 nm diode lasers
018379 (1997-06-02)		4 W quasi-continuous-wave output power from 2 μm AlGaAsSb/InGaAsSb single-quantum-well broadened waveguide laser diodes
018B09 (1996-09-30)		Ultralow-loss broadened-waveguide high-power 2 μm AlGaAsSb/InGaAsSb/GaSb separate-confinement quantum-well lasers
018B26 (1996-09-09)		8 W continuous wave front-facet power from broad-waveguide Al-free 980 nm diode lasers
019214 (1997)		High power continuous and quasi-continuous wave InGaAsP/InP broad-waveguide separate confinement-heterostructure multiquantum well diode lasers
01BF77 (1995)		Low-threshold, high-power, 1.3-μm wavelength, InGaAsP-InP etched-facet folded-cavity surface-emitting lasers
01C068 (1995-09-04)		2.7-μm InGaAsSb/AlGaAsSb laser diodes with continuous-wave operation up to -39 °C
01CD41 (1995-04-10)		Room-temperature 2.78 μm AlGaAsSb/InGaAsSb quantum-well lasers
01E757 (1994)		InGaP/InGaAsP/GaAs 0.808 μm separate confinement laser diodes grown by metalorganic chemical vapor deposition
01ED65 (1994-02)		Controlling the mode composition of high-power buried InGaAsP/GaAs lasers with a wavelength of 0.8 μm
020487 (1992)		Electron-microscope studies of liquid-phase epitaxy of InGaAsP/InGaP/GaAs structures with thin (<10 nm) layers

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