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Index « Auteurs » - entrée « C. Caneau »
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C. Cane < C. Caneau < C. Cantalini  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 100.
[0-20] [0 - 20][0 - 50][20-40]
Ident.Authors (with country if any)Title
005E54 (2007) InP-based long wavelength VCSELs : Their Characteristics and Applications
00BA06 (2004-04-26) Nonlinear optical input-output characteristics of 1.55 μm injection-locked vertical-cavity surface-emitting lasers
00D866 (2003) High efficiency long wavelength VCSEL on InP grown by MOCVD
013C75 (1999) Design and realization of a 1.55-μm patterned vertical cavity surface emitting laser with lattice-mismatched mirror layers
014B50 (1998) Enhancement-mode high electron mobility transistors (E-HEMT's) lattice-matched to InP
015804 (1998) Growth of GaAsN/GaAs, GaInAsN/GaAs and GaInAsN/GaAs quantum wells by low-pressure organometallic chemical vapor deposition
015C41 (1998) High-speed quantum well and quantum dot lasers
016389 (1998-05) Growth and characterization of defect-free GaAs/AlAs distributed Bragg reflector mirrors on patterned InP-based heterostructures
016947 (1998) InP-based 1.5 μm vertical cavity surface emitting laser with epitaxially grown defect-free GaAs-based distributed Bragg reflectors
017021 (1998) Temperature dependence of the threshold current in 1.55-μm strain-compensated multiquantum-well distributed-feedback lasers
017693 (1998-01-12) Lateral oxidation of InAlAs in InP-based heterostructures for long wavelength vertical cavity surface emitting laser applications
017957 (1997) Compact arrayed waveguide grating multifrequency laser using bulk active material
017C63 (1997) Modulation characteristics of high speed (f-3dB = 20 GHz) tunneling injection InP/InGaAsP 1.55 μm ridge waveguide lasers extracted from optical and electrical measurements
017D24 (1997) Design, fabrication, and performance of high-speed monolithically integrated InAlAs/InGaAs/InP MSM/HEMT photoreceivers
018194 (1997-08-04) Growth of high-quality GaAs/AlAs Bragg mirrors on patterned InP-based quantum well mesa structures
018879 (1996-11) Fabrication of InP-based wavelength division multiplexing arrayed waveguide filters using chemically assisted ion beam etching
018889 (1996-11) Quantum dots fabricated in InP/InGaAs by free Cl2 gas etching and metalorganic chemical vapor deposition regrowth
019041 (1996-02-12) InP/GaAsSb/InP and InP/GaAsSb/InGaAsP double heterojunction bipolar transistors with a carbon-doped base grown by organometallic chemical vapor deposition
019346 (1997) High-speed ITO-InAlAs-InGaAs Schottky-barrier photodetector
019A97 (1997) 0.3-μM gate-length enhancement-mode InAlAs/InGaAs/InP high-electron mobility transistor
019C03 (1997) Tolerance of InP polarization-independent arrayed waveguide filters using square waveguide cores

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