Serveur d'exploration sur l'Indium - Corpus (Accueil)

Index « Auteurs » - entrée « B. G. Streetman »
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B. G. Shen < B. G. Streetman < B. G. Strettman  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 40.
[0-20] [0 - 20][0 - 40][20-40]
Ident.Authors (with country if any)Title
011390 (2000) High speed resonant-cavity InGaAs/InAlAs avalanche photodiodes
013007 (2000) Waveguide In0.53Ga0.47As-In0.52Al0.48As avalanche photodiode
013370 (1999) Resonant-cavity InGaAs-InAlAs avalanche photodiodes with gain-bandwidth product of 290 GHz
014395 (1999-10-15) Quantum dots at the nanometer scale: Interdot carrier shuffling and multiparticle states
014553 (1999-09-20) Factors influencing the interfacial roughness of InGaAs/GaAs heterostructures: A scanning tunneling microscopy study
015039 (1999-05) Substrate preparation and interface grading in InGaAs/InAlAs photodiodes grown on InP by molecular-beam epitaxy
015049 (1999-05) Long-wavelength luminescence from In0.5Ga0.5As/GaAs quantum dots grown by migration enhanced epitaxy
015F00 (1998-12-07) Improved optical response of superlattice graded InAlAs/InGaAs p-i-n photodetectors
016387 (1998-05) Resonant-cavity-enhanced avalanche photodiodes grown by molecular beam epitaxy on InP for detection near 1.55 μm
016788 (1997) Excess noise in GaAs avalanche photodiodes with thin multiplication regions
016B76 (1998-08-10) Thin multiplication region InAlAs homojunction avalanche photodiodes
017770 (1997-12-15) Determination of 2D Pair Correlations and Pair Interaction Energies of In Atoms in Molecular Beam Epitaxially Grown InGaAs Alloys
017E28 (1997-12-15) Influence of Al content on formation of InAlGaAs quantum dots grown by molecular beam epitaxy
018476 (1997-05-05) Quantum dot vertical-cavity surface-emitting laser with a dielectric aperture
018722 (1997-01-13) High-speed resonant-cavity separate absorption and multiplication avalanche photodiodes with 130 GHz gain-bandwidth product
018C83 (1996-05) Molecular beam epitaxy growth of resonant-cavity separate-absorption-and-multiplication avalanche photodiodes
01C350 (1995) High-efficiency, dual-wavelength, wafer-fused resonant-cavity photodetector operating at long wavelengths
01D248 (1995-01-30) High quantum efficiency dual wavelength resonant-cavity photodetector
01E479 (1994) Low-threshold continuous-wave surface emitting lasers with etched void confinement
01F276 (1993) Scanning tunneling microscopy of doping and compositional III-V homo- and heterostructures
020259 (1993) Selective etching of AlxGa1-xAs and In(AlxGa1-x)As alloys in succinic acid-hydrogen peroxide solutions

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