A. Yonekura < A. Yoshida < A. Yoshikawa

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 47.
[0-20] [0 - 20][0 - 47][20-40]

Ident.	Authors (with country if any)	Title
006E00 (2008)		Nitrogen-induced nanostructure formation in hydrogenated amorphous carbon films doped with nitrogen
009815 (2006)		Study of electron irradiation-induced defects in CuInSe2 and CuInxGa1-xSe2 by electron spin resonance
00A339 (2005)		Enhancement effect of Tb-related luminescence in AlxGa1-xN with the AlN molar fraction 0 ≤ x ≤ 1
00AD46 (2004)		Strong blue emission from Er3+ doped in AlxGa1-xN
00C229 (2003)		Improvement of luminescence capability of Tb3+-related emission by AlxGa1-xN
00C410 (2003)		Preparation of CuIn(S, Se)2 thin films by thermal crystallization in sulfur and selenium atmosphere
014638 (1999)		Effect of substrate temperature on properties of thin films prepared by RF sputtering from CuInSe2 target with Na2Se
014877 (1999)		Preparation of CuIn(SxSe1-x)2 thin films by excimer laser ablation from binary compounds
014884 (1999)		Annealing effects of CuInSe2 films prepared by pulsed laser deposition
015E31 (1998-12-15)		Electronic structure of indium nitride studied by photoelectron spectroscopy
017303 (1998)		Characterization of Cu(InxGa1-x)2Se3.5 thin films prepared by rf sputtering
017304 (1998)		Preparation of CuInSe2 thin films with large grain by excimer laser ablation
017305 (1998)		Influence of annealing temperature on the properties of Cu(In,Ga)Se2 thin films by thermal crystallization in Se vapor
017B59 (1997)		Characterization of CuInS2 thin films prepared by sputtering from binary compounds
018B87 (1996-08-12)		Raman spectra of indium nitride thin films grown by microwave-excited metalorganic vapor phase epitaxy on (0001) sapphire substrates
01A397 (1996)		Large grain growth in Cu(In,Ga)Se2 thin films with band gap of around 1.4 eV by thermal crystallization in saturated Se vapors
01A708 (1996)		Fabrication and characterization of CuIn(SxSe1-x)2 thin films deposited by r.f. sputtering
01AE56 (1996)		Preparation of ordered vacancy chalcopyrite thin films by RF sputtering from CuInSe2 target with Na2Se
01B688 (1995)		Precise measurement of the gamma-ray emission probabilities for 116mIn with half-life of 54.15 min
01BC62 (1995)		Crystal structure and orientation of AlxIn1-xN epitaxial layers grown on (0001) α-Al2O3 substrates
01CD97 (1995)		Growth of AlxIn1-xN single crystal films by microwave-excited metalorganic vapor phase epitaxy

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