A. Qusto < A. R. Adams < A. R. Albrecht

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 61.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
008258 (2007)		Carrier recombination mechanisms in mid-infrared GaInAsSb quantum well lasers
008261 (2007)		Band gap dependence of the recombination processes in InAs/GaAs quantum dots studied using hydrostatic pressure
009614 (2004)		Temperature and wavelength dependence of recombination processes in 1.5μm InGaAlAs/InP-based lasers
00AA32 (2004)		Temperature and pressure dependence of recombination processes in 1.5 μm InGaAlAs/InP-based quantum well lasers
00AA33 (2004)		Carrier recombination processes in 1.3 μm and 1.5 μm InGaAs(P)-based lasers at cryogenic temperatures and high pressures
00AA34 (2004)		Carrier leakage suppression utilising short-period superlattices in 980 nm InGaAs/GaAs quantum well lasers
00AA44 (2004)		Recombination mechanisms in InAs/InP quantum dash lasers studied using high hydrostatic pressure
00D786 (2003)		Auger recombination in InGaAs/AlGaAs-based MQW semiconductor lasers emitting at 980 nm
00D794 (2003)		Gain-cavity alignment profiling of 1.3 μm emitting GaInNAs vertical cavity surface emitting lasers (VCSELs) using high pressure techniques
00D795 (2003)		Hydrostatic pressure dependence of recombination mechanisms in GaInNAs, InGaAsP and AlGaInAs 1.3 μm quantum well lasers
00D798 (2003)		Correlation between lasing properties and band alignment of edge emitting lasers with (Ga, In)(N, As)/Ga(N, As) active regions
00D799 (2003)		High-pressure studies of the recombination processes, threshold currents, and lasing wavelengths in InAs/GaInAs quantum dot lasers
00D800 (2003)		Pressure and k.p studies of band parameters in dilute-N GaInNAs/GaAs multiple quantum wells
00D802 (2003)		The effect of pressure on the radiative efficiency of InAs based light emitting diodes
00D805 (2003)		Coupling of large optical loss with Auger recombination in 1.3 μm InGaAsP lasers investigated using hydrostatic pressure
00D807 (2003)		Wavelength dependence of the modal refractive index in 1.3 μm InGaAsP, AlGaInAs and GaInNAs lasers using high pressure
00D808 (2003)		Quantifying pressure-dependent recombination currents in GaInNAs lasers using spontaneous emission measurements
00D839 (2003-04-07)		Unusual increase of the Auger recombination current in 1.3 μm GaInNAs quantum-well lasers under high pressure
00DB42 (2003-02-24)		High-pressure measurements of mid-infrared electroluminescence from InAs light-emitting diodes at 3.3 μm
00DE34 (2003)		InSb1-xNx growth and devices
00E382 (2002-10-15)		Electronic structure of InyGa1-yAs1-xNx/GaAs multiple quantum wells in the dilute-N regime from pressure and kp studies

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