A. C. Goldberg < A. C. Gossard < A. C. Gurlo

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 50.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000836 (2013)		Co-doping of InxGa1-xAs with silicon and tellurium for improved ultra-low contact resistance
003531 (2011)		Properties of molecular beam epitaxially grown ScAs:InGaAs and ErAs:InGaAs nanocomposites for thermoelectric applications
004C66 (2009)		Toward a 1550 nm InGaAs photoconductive switch for terahertz generation
008478 (2006)		High-sensitivity, quasi-optically-coupled semimetal-semiconductor detectors at 104 GHz
008E59 (2005)		First MMW characterization of ErAs/InAlGaAs/InP semimetal- semiconductor -schottky diode (S3) detectors for passive millimeter- wave and infrared imaging
009216 (2005)		State-of-the-art in 1.55 μm ultrafast InGaAs photoconductors, and the use of signal-processing techniques to extract the photocarrier lifetime
009611 (2004)		Low leakage current metamorphic InGaAs/InP DHBTs with fτand fmax > 268 GHz on a GaAs substrate
00A092 (2005)		>1000utput differential efficiency 1.55-μm VCSELs using submonolayer superlattices digital-alloy multiple-active-regions grown by MBE on InP
00A449 (2004)		Observation of the spin Hall effect in semiconductors
00A758 (2004)		Control of electron-spin coherence using Landau level quantization in a two-dimensional electron gas
00AB85 (2004)		Current-induced spin polarization in strained semiconductors
00AF35 (2004)		Coherent spin manipulation without magnetic fields in strained semiconductors
00B296 (2004)		A 183 GHz fτ and 165 GHz fmax regrown-emitter DHBT with abrupt InP emitter
00B641 (2004)		A 160-GHz fT and 140-GHz fMAX submicrometer InP DHBT in MBE regrown-emitter technology
00B934 (2004)		High bandwidth and low-leakage current InP-In0.53Ga0.47As-InP DBHTs on GaAs substrates
00B994 (2004-05-01)		Structural engineering of ferromagnetism in III-V digital ferromagnetic heterostructures
00C735 (2003-11-10)		Picosecond photocarrier-lifetime in ErAs:InGaAs at 1.55 μm
00CE63 (2003)		Thermal properties of metamorphic buffer materials for growth of InP double heterojunction bipolar transistors on GaAs substrates
00D160 (2003)		Reduction of the unintentional background electron density in AlSb/InAs/AlSb quantum wells
00D705 (2003-05-05)		Photomixing and photoconductor measurements on ErAs/InGaAs at 1.55 μm
00E415 (2002)		High speed, low leakage current InP/In0.53Ga0.47As/InP metamorphic double heterojunction bipolar transistors

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