Heterojunction bipolar phototransistors (HPT) < Heterojunction bipolar transistors < Heterojunction field effect transistor

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 56.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000019 (2013)		Submicrometer InP/InGaAs DHBT Architecture Enhancements Targeting Reliability Improvements
000027 (2013)		Procedure to derive analytical models for microwave noise performances of Si/SiGe:C and InP/InGaAs heterojunction bipolar transistors
000075 (2013)		A Large-Swing 112-Gb/s Selector-Driver Based on a Differential Distributed Amplifier in InP DHBT Technology
000076 (2013)		70 GSa/s and 51 GHz bandwidth track-and-hold amplifier in InP DHBT process
000143 (2012)		480-GHz fmax in InP/GaAsSb/InP DHBT With New Base Isolation μ-Airbridge Design
000148 (2011)		Trends in Submicrometer InP-Based HBT Architecture Targeting Thermal Management
000179 (2011)		Reliability of submicron InGaAs/InP DHBT under thermal and electrical stresses
000204 (2011)		Investigation of the degradation mechanisms of InP/InGaAs DHBT under bias stress conditions to achieve electrical aging model for circuit design
000211 (2011)		Improved External Base Resistance Extraction for Submicrometer InP/InGaAs DHBT Models
000258 (2010)		Thermal aging model of InP/InGaAs/InP DHBT
000269 (2010)		Small-signal modeling of Emitter-up HBT using an improved analytical approach. Application to InGaAlAs/GaAsSb/InP DHBT with strained base
000272 (2010)		Reliability of high voltage/high power L/S-band Hbt technology
000277 (2010)		Preliminary results of storage accelerated aging test on InP/InGaAs DHBT
000417 (2009)		Monolithic integration of InP-based transistors on Si substrates using MBE
000437 (2009)		InP DHBT selector-driver with 2 × 2.7 V swing for 100 Gbit/s operation
000604 (2008)		An analytic procedure for extraction of metallic collector-up InP/InGaAsP/InGaAs HBT small signal equivalent circuit parameters
000608 (2008)		39.4-Gb/s Duobinary Transmission Over 24.4 m of Coaxial Cable Using a Custom Indium Phosphide Duobinary-to-Binary Converter Integrated Circuit
000666 (2007)		MBE growth of heavily carbon doped GaAsSb on InP for heterojunction bipolar transistor applications
000785 (2006)		Photoreflectance study at the micrometer scale
000791 (2006)		On the simulation of low-frequency noise upconversion in InGaP/GaAs HBTs
000870 (2005)		Two-dimensional DC simulation methodology for InP/GaAs0.51Sb0.49/InP heterojunction bipolar transistor

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