Hall conductivity < Hall effect < Hall effect devices

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 104.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000002 (2014)		Physical and chemical degradation behavior of sputtered aluminum doped zinc oxide layers for Cu(In,Ga)Se2 solar cells
000069 (2013)		Contact vs bulk effects in N-semi-insulating-N and P-semi-insulating-P diodes
000264 (2010)		Surfactant effect of bismuth in atmospheric pressure MOVPE growth of InAs layers on (1 0 0) GaAs substrates
000273 (2010)		Recent advances in the MOVPE growth of indium nitride
000325 (2010)		Electronic Properties of InAs/GaSb Superlattice Detectors to Evaluate High Temperature Operation
000461 (2009)		Effect of pressure on electrical properties of short period InAs/GaSb superlattice
000530 (2008)		Non-Fermi liquid behavior in the magnetotransport of quasi two-dimensional heavy Fermion compounds CeMIn5
000533 (2008)		New hints on the origin of quantum criticality in CeCoIn5: A Hall effect study
000612 (2007)		Unusual Hall effect in quasi two-dimensional strongly correlated metal CeCoIn5
000614 (2007)		Transport measurements under pressure in III-IV layered semiconductors
000628 (2007)		Striking similarities between HTSC and quasi-2D HF CeRIn5
000650 (2007)		Non-fermi liquid behavior in the magnetotransport of CeMIn5(M: Co and Rh) : Striking similarity between quasi two-dimensional heavy fermion and high-Tc cuprates
000804 (2006)		Localized donor state above the conduction band minimum in InN revealed by high pressure and temperature transport experiments
000833 (2006)		Evolution of hall coefficient in two-dimensional heavy fermion CeCoIn5
000998 (2005)		Density of states effective mass of n-type CuInSe2 from the temperature dependence of Hall coefficient in the activation regime
000A02 (2005)		Crystal symmetry and pressure effects on the valence band structure of γ-InSe and ε-GaSe : Transport measurements and electronic structure calculations
000B16 (2004)		Microminiature Hall probes based on n-InSB(Sn)/i-GaAs heterostructure for pulsed magnetic field applications up to 52 T
000B56 (2004)		Electron-beam-induced reactivation of Si dopants in hydrogenated two-dimensional AlGaAs heterostructures: a possible new route for III-V nanostructure fabrication
000B70 (2004)		Comparative study of LPE and VPE silicon thin film on porous sacrificial layer
000C02 (2003-12-15)		Insulating states of a broken-gap two-dimensional electron-hole system
000D56 (2003)		ITO-on-top organic light-emitting devices: a correlated study of opto-electronic and structural characteristics

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