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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « Y. Druelle »
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Y. Desieres < Y. Druelle < Y. Dufour  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 7.
Ident.Authors (with country if any)Title
001974 (1998) MBE grown InAlAs/InGaAs lattice mismatched layers for HEMT application on GaAs substrate
001991 (1998) InAlAs/InGaAs metamorphic HEMT with high current density and high breakdown voltage
001D31 (1996-12) Croissance par épitaxie par jets moléculaires d'hétérostructures à dopage planaire pour application aux transistors HEMT
002570 (1993) Raman scattering in InxGa1-xAs/GaAs superlattices grown by molecular beam epitaxy
002618 (1993) Microwave performance of 0.4μm gate metamorphic In0.29Al0.71As/In0.3Ga0.7As HEMT on GaAs substrate
002846 (1992) Metamorphic In0.3Ga0.7As/In0.29Al0.71As layer on GaAs : a new structure for high performance high electron mobility transistor realization
002A92 (1990) Ultra high transconductance 0•25 μm gate MESFET with strained InGaAs buffer layer

List of associated KwdEn.i

Nombre de
documents		Descripteur
5Gallium Arsenides
4Epitaxy
4Gallium Indium Arsenides Mixed
4High electron mobility transistor
3Experimental study
3Field effect transistor
3Microelectronic fabrication
3Molecular beam
3Transconductance
2Aluminium Indium Arsenides Mixed
2III-V compound
2Ternary compound
2Voltage current curve
1Aluminium Arsenides
1Aluminium arsenides
1Binary compound
1Buffer layer
1Characterization
1Charge carrier mobility
1Concentration effect
1Conduction band
1Current density
1Cut off frequency
1Deformation
1Design
1Electric breakdown of solids
1Electric power measurement
1Epitaxial film
1Experiments
1Frequency response
1Gallium arsenides
1Heterojunction
1High electron mobility transistors
1Indium Arsenides
1Indium Phosphides
1Indium arsenides
1Metal semiconductor field effect transistor
1Microwave
1Mismatch lattice
1Molecular beam condensation
1Molecular beam epitaxy
1Multiple layer
1Multiple quantum well
1Performance
1Planar doping
1Power added efficiency (PAE)
1Pseudomorphic transistor
1Raman scattering
1Semiconducting indium gallium arsenide
1Semiconductor device
1Semiconductor doping
1Solid state device
1Structure
1Superlattice
1Surface structure
1Theoretical study

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/France/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i -k "Y. Druelle" 

HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i  \
                -Sk "Y. Druelle" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/France/Analysis/biblio.hfd

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   |area=    IndiumV3
   |flux=    France
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   |clé=    Y. Druelle
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