S. Long < S. Loualiche < S. Lourdudoss

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 49.
[0-20] [0 - 20][0 - 49][20-40]

Ident.	Authors (with country if any)	Title
000274 (2010)		QD laser on InP substrate for 1.55 μm emission and beyond
000382 (2009)		Theoretical analysis of 1.55-μm InAs/InP (113B) quantum dot lasers based on a multi-population rate equation model
000465 (2009)		Design of an InGaAs/InP 1.55 μm electrically pumped VCSEL
000487 (2008)		Theoretical study of highly strained InAs material from first-principles modelling : application to an ideal QD
000546 (2008)		Lasing spectra of 1.55 pm InAs/InP quantum dot lasers : theoretical analysis and comparison with the experiments
000682 (2007)		First demonstration of a 1.52 μm RT InAs/InP(311)B laser with an active zone based on a single QD layer
000713 (2007)		Characterization of InAs quantum wires on (001)InP : Toward the realization of VCSEL structures with a stabilized polarization
000734 (2007)		1516 nm room temperature CW operation of quantum dot InAs/InP(311)B singlemode laser
000737 (2006)		Étude en température d'un laser à un seul plan de boîtes quantiques d'InAs sur substrat InP émettant à 1,55μm
000738 (2006)		Structures à îlots quantiques sur substrat InP(100) pour l'émission dans le moyen infrarouge (2-5μm)
000739 (2006)		Régime impulsionnel 300fs, 100 pJ, autodémarrant généré par un laser à fibre Er3+ avec absorbant saturable InGaAs/InP dopés fer ultrarapide
000740 (2006)		Réalisation d'un laser à faible courant de seuil, avec des boites quantiques InAs/InP organisées et couplées latéralement
000742 (2006)		Génération d'impulsions courtes dans un laser à fibre dopée erbium grâce à la combinaison d'un absorbant saturable rapide et d'effets de polarisation
000780 (2006)		Self-assembled InAs quantum dots grown on InP (311)B substrates : Role of buffer layer and amount of InAs deposited
000835 (2006)		Erbium-doped fiber laser passively Q-switched by an InGaAs/InP multiple quantum well saturable absorber
000844 (2006)		Design and fabrication of GaInAsP/InP VCSEL with two a-Si/a-SiNx Bragg reflectors
000855 (2006)		Carrier dynamics and saturation effect in (113)B InAs/InP quantum dot lasers
000857 (2006)		Approach to wetting-layer-assisted lateral coupling of InAs/InP quantum dots
000887 (2005)		Structural and electronic properties of BAs and B========exist;Ga1-xAs, BxIn1-xAs alloys
000929 (2005)		Molecular beam epitaxy growth of quantum dot lasers emitting around 1.5μm on InP(311)B substrates
000976 (2005)		Emission wavelength control of InAs quantum dots in a GaInAsP matrix grown on InP(3 1 1)B substrates

---

List of associated KwdEn.i

Nombre de documents	Descripteur
27	III-V semiconductors
26	Experimental study
25	Indium arsenides
22	Binary compounds
18	Photoluminescence
17	Quantum dots
16	Indium phosphides
12	Semiconductor lasers
11	Indium Phosphides
11	Semiconductor materials
10	Gallium arsenides
9	Indium compounds
9	Quantum dot lasers
7	Atomic force microscopy
6	Ambient temperature
6	Crystal growth from vapors
6	GSMBE method
6	Gallium Indium Arsenides Mixed
6	Molecular beam epitaxy
6	Optical pumping
6	Semiconductor quantum dots
6	Ternary compounds
6	Threshold current
5	Island structure
5	Time resolved spectra
4	Electronic structure
4	Energy gap
4	Excited states
4	Indium Arsenides
4	Inorganic compound
4	Mismatch lattice
4	Nanostructured materials
4	Rate equation
4	Schottky barrier diode
4	Semiconductor epitaxial layers
4	Theoretical study
3	Barrier height
3	Buffer layer
3	Chemical beam epitaxy
3	Current density
3	Density
3	Doping
3	Emission spectra
3	Epitaxy
3	Erbium-doped fiber
3	Excitons
3	Fiber lasers
3	Gallium phosphides
3	Ground states
3	Heterojunctions
3	III-V compound
3	Iron
3	Molecular beam condensation
3	Nanostructures
3	Nonlinear optics
3	Operating mode
3	Optical communication
3	Optical saturable absorption
3	Quantum wells
3	Quantum wires
3	Saturable absorbers
3	Semiconductor growth
3	Semiconductor quantum wells
3	Surface emitting lasers
3	Thickness
3	Vertical cavity laser
3	Voltage current curve
2	Band structure
2	Beryllium
2	Bragg reflection
2	Continuous wave
2	Density functional method
2	Dimensions
2	Distributed Bragg reflection
2	Doped materials
2	Electrical properties
2	Electroluminescence
2	Epitaxial film
2	Field effect transistor
2	Gallium Arsenides
2	Gallium Indium Phosphides Mixed
2	Heterojunction
2	High electron mobility transistor
2	High-speed optical techniques
2	Impurity
2	Infrared laser
2	Infrared spectra
2	Inorganic compounds
2	Iron additions
2	Line broadening
2	Line widths
2	Measuring methods
2	Numerical method
2	Optical method
2	Optical pulse generation
2	Optical switches
2	Oxygen
2	Quantum well lasers
2	Quaternary compounds
2	Schottky barrier

---

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/France/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i -k "S. Loualiche" 

HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i  \
                -Sk "S. Loualiche" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/France/Analysis/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    France
   |étape=   Analysis
   |type=    indexItem
   |index=    Author.i
   |clé=    S. Loualiche
}}

---

This area was generated with Dilib version V0.5.77. Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024