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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « S. Lepilliet »
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S. Lehmann < S. Lepilliet < S. Lepkowski  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 8.
Ident.Authors (with country if any)Title
000733 (2007) A 200-GHz true E-mode low-noise MHEMT
000E91 (2002) fmax of 490 GHz metamorphic In0.52Al0.48As/In0.53Ga 0.47As HEMTs on GaAs substrate
001057 (2002) 0.12 μm transferred-substrate In0.52Al0.48As/In0.53Ga 0.47As HEMTs on silicon wafer
001431 (2000) Indium content in metamorphic InxAl1-xAs/InxGa1-xAs HEMTs on GaAs substrate: A new structure parameter
001624 (1999) HEMTS métamorphiques à hétérojonction InxAl1-xAs/InxGa1-xAs sur substrat gaas : Influence du taux d'indium x
001700 (1999) Metamorphic In0.4Al0.6As/In0.4Ga0.6As HEMT's on GaAs substrate
001782 (1999) 94-GHz MMIC CPW low-noise amplifier on InP
002618 (1993) Microwave performance of 0.4μm gate metamorphic In0.29Al0.71As/In0.3Ga0.7As HEMT on GaAs substrate

List of associated KwdEn.i

Nombre de
documents		Descripteur
4High electron mobility transistors
4Transconductance
3Experiments
3Semiconducting indium compounds
2Cut off frequency
2Epitaxy
2Field effect transistor
2High electron mobility transistor
2Molecular beam
2Semiconducting gallium arsenide
2Semiconductor device structures
2Substrates
2Theoretical study
1Aluminium Indium Arsenides Mixed
1Analog circuit
1Band offset
1Barrier height
1Coplanar technology
1Coplanar waveguides
1Current gain
1Current mirrors
1Current voltage characteristics
1Cutoff frequency
1Delta doping plane
1Direct current
1Drain to source current
1Dynamic characteristic
1Electric currents
1Electrical characteristic
1Electron beams
1Electron mobility
1Electron transport properties
1Enhancement mode
1Equivalent circuits
1Experimental study
1Frequencies
1Frequency response
1GHz range
1Gain
1Gallium Arsenides
1Gallium Indium Arsenides Mixed
1Gate current
1Gate length
1Gate voltage
1Gates (transistor)
1HEMT integrated circuits
1Heterojunction
1Heterojunctions
1Indium
1Indium aluminum arsenide
1Indium gallium arsenide
1Indium phosphate
1Integrated circuit manufacture
1Lattice constants
1Leakage current
1Low noise amplifier
1Low noise circuit
1Metamorphic semiconductors
1Metamorphic transistor
1Metamorphosis
1Microelectronic fabrication
1Microwave
1Millimeter wave integrated circuits
1Mismatch lattice
1Molecular beam epitaxy
1Monolithic microwave integrated circuits
1Optical communication
1Performance
1Reverse breakdown voltage
1Schottky barrier
1Schottky contact
1Semiconducting indium gallium arsenide
1Semiconductor device manufacture
1Semiconductor growth
1Sheet resistance
1Short channel effect
1Silicon wafers
1Standard deviation
1State of the art
1Substrate temperature sequence
1Theory
1Transferred substrate
1Voltage current curve
1Voltage standard
1Voltage threshold
1Wafer

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EXPLOR_STEP=IndiumV3/Data/France/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i -k "S. Lepilliet" 

HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i  \
                -Sk "S. Lepilliet" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/France/Analysis/biblio.hfd

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