M. Gaune-Escard < M. Gauneau < M. Gaunneau

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 22.
[0-20] [0 - 20][0 - 22][20-21][20-40]

Ident.	Authors (with country if any)	Title
001C99 (1997)		Characterization of phosphorus oxinitride (PON) gate insulators for InP metal-insulator-semiconductor devices
001F41 (1996)		Feasibility of 1.5 μm staircase solid state photomultipliers in the AlGaSb/GaInAsSb system
002398 (1994)		High resistivity InP :Ti,Be by GSMBE
002562 (1993)		Scanning photoluminescence characterization of iron-doped gas source molecular beam epitaxy indium phosphide layers
002978 (1991)		Spatial investigation of an iron-doped indium phosphide ingot
002A14 (1991)		Inhomogeneity in a semi-insulating indium phosphide ingot
002A26 (1991)		GaPSb : a new ternary material for Schottky diode fabrication on InP
002A38 (1991)		Excitation mechanisms of rare earth (Yb) luminescence in III-V semiconductors (InP)
002B08 (1990)		Spatial distribution of donors in silicon implanted iron and iron-gallium doped semi-insulating indium phosphide
002B77 (1990)		Electrical and optical properties of rare earth dopants (Yb, Er) in n-type III-V (InP) semiconductors
002B87 (1990)		Characterisation of semi-insulating InP:Fe
002C17 (1989)		Dopage béryllium de couches InGaAs élaborées par épitaxie jet moléculaire: étude de la compensation
002C48 (1989)		Oxygen complexes in III-V compounds as determined by secondary-ion mass spectrometry under cesium bombardment
002E61 (1987)		X-ray topography and TEM studies of (Ga,Fe)-double-doped LEC grown InP crystals
002E94 (1987)		Properties of InP doped with Led ions
002F01 (1987)		Nondiffusion and 1•54 μm luminescence of erbium implanted in InP
002F11 (1987)		Influence of oxygen incorporation on beryllium-doped InGaAs grown by molecular beam epitaxy
002F18 (1987)		Gold diffusion in InP
002F96 (1986)		Residual sulphur and silicon doping in InP and GaInAs
003000 (1986)		Properties of titanium in InP
003075 (1985)		Further evidence of chromium, manganese, iron, and zinc redistribution in indium phosphide after annealing

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List of associated KwdEn.i

Nombre de documents	Descripteur
17	Experimental study
16	Indium Phosphides
14	Inorganic compound
10	Semiconductor materials
8	Impurity
8	Photoluminescence
7	Secondary ion mass spectrometry
5	Crystal growth
5	Doping
5	III-V compound
5	Iron
4	Beryllium
4	Characterization
4	Charge carrier concentration
4	Czochralski method
4	Epitaxy
4	Gallium Indium Arsenides Mixed
4	Hall effect
4	Molecular beam condensation
4	Single crystal
3	Charge carrier mobility
3	Electron paramagnetic resonance
3	Impurity density
3	Ion implantation
3	Liquid encapsulation
3	Temperature
3	Thin film
2	Annealing
2	Charge carrier trapping
2	Concentration distribution
2	Deep level transient spectrometry
2	Defect level
2	Donor center
2	Electric resistivity
2	Erbium
2	Growth from liquid
2	Impurity diffusion
2	Impurity level
2	Low temperature
2	N type conductivity
2	Voltage current curve
2	Ytterbium
1	Aluminium Antimonides
1	Band structure
1	Beryllium addition
1	Chromium
1	Codoping
1	Compensation
1	Complex defect
1	Concentration effect
1	Contamination
1	Crystal defect
1	Diffusion profile
1	Doping profile
1	Electrical conductivity
1	Electrical properties
1	Electronic transition
1	Electrons
1	Epitaxial film
1	Exciton
1	Feasibility
1	Fitting
1	GSMBE
1	Gallium
1	Gallium Antimonides
1	Gallium Antimonides phosphides
1	Gallium Arsenides
1	Gas injection
1	Gold
1	Heteroepitaxy
1	Heterogeneity
1	High pressure
1	High resolution
1	High temperature
1	Indium Arsenides
1	Indium phosphide
1	Inversion layer
1	Lanthanide
1	Laser
1	Light emitting device
1	Luminescence decay
1	MIS structure
1	Magnesium
1	Manganese
1	Manufacturing process
1	Microelectronic fabrication
1	Minority carrier
1	Mismatch lattice
1	Molecular beam
1	Molybdenum
1	Niobium
1	Numerical simulation
1	Optical properties
1	Oxygen
1	P type conductivity
1	Palladium
1	Phosphorus Nitrides oxides
1	Photomultiplier
1	Process improvement
1	Quaternary compound

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