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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « J. N. Patillon »
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J. N. Isaia < J. N. Patillon < J. N. Talbot  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 9.
Ident.Authors (with country if any)Title
002856 (1992) Investigations of MOCVD-grown AllnAs-InP type II heterostructures
002961 (1991) Uniformity-optical properties of GaInP-GaAlInP layers grown by MOVPE
002A24 (1991) High optical and electrical quality GaInAs/InP, GaAs/InP double heterostructures for optoelectronic integration
002B25 (1990) Optical properties of As-etched and regrown InP/InGaAs quantum wires and dots
002B66 (1990) Enhancement of intrinsic photoluminescence due to lateral confinement in InP/InGaAs quantum wires and dots
002C32 (1989) Study of hopping in two dimensional electron gas in InGaAs/InP heterostructures with two subbands
002C68 (1989) III-V alloys and their potential for visible emitter applications
002D62 (1988) Optical studies of misfit strain effects in GaxIn1-x P epitaxial layers on (001) GaAs substrates
002E99 (1987) Photoluminescence investigation of InGaAS-InP quantum wells

List of associated KwdEn.i

Nombre de
documents		Descripteur
8Experimental study
8Inorganic compound
8Semiconductor materials
7Photoluminescence
6Indium Phosphides
5Gallium Indium Arsenides Mixed
4Very low temperature
3Heterojunction
3Organometallic compound
2Chemical composition
2Excitation spectrum
2Exciton
2Gallium Indium Phosphides Mixed
2Growth from vapor
2Magnetoconductivity
2Quantum dot
2Quantum well
2Quantum wire
2Temperature
2Thickness
1Aluminium Gallium Indium Phosphides Mixed
1Aluminium Gallium Indium Phosphorus Mixed
1Aluminium Indium Arsenides Mixed
1Bandwidth
1Bound exciton
1Capacitance
1Characterization
1Charge carrier mobility
1Charge carrier trapping
1Chemical vapor deposition
1Confinement
1Crystal growth
1Doping profile
1Double heterojunction
1Electrical conductivity
1Electroluminescence
1Electron beam lithography
1Epitaxial film
1Epitaxy
1Excitation intensity
1Field effect transistor
1Gallium Arsenides
1Gallium Indium Phosphorus Mixed
1Hopping conductivity
1Infrared absorption
1Infrared radiation
1Instrumentation
1Integrated circuit
1Interband transition
1Ion beam
1Localized state
1Low temperature
1Magnetooptical properties
1Measurement
1Mismatch lattice
1Multiple quantum well
1Optoelectronic device
1Photoconductivity
1Photoreceptor
1Planar technology
1Quantum Hall effect
1Radiative recombination
1Room temperature
1Shubnikov de Haas effect
1Solid solution
1Sputtering
1Superlattice
1Thin film
1Uniformity
1Valence band
1Voltage current curve
1X ray spectrometry
1p i n diode

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