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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « J. Chevallier »
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J. Cheng < J. Chevallier < J. Choisnet  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 14.
Ident.Authors (with country if any)Title
000390 (2009) Study of the passivation mechanisms of boron doped diamond using the Amplitude Modulated Step Scan Fourier Transform Photocurrent Spectroscopy
000E65 (2002-05-13) Carbon reactivation kinetics in the base of heterojunction GaInP-GaAs bipolar transistors
001864 (1998-05-18) Evidence of hydrogen-carbon interactions in plasma hydrogenated carbon-doped n-InP
001938 (1998) Significant reduction of propagation losses in InGaAsP-InP buried-stripe waveguides by hydrogenation
001956 (1998) Photoluminescence of as-grown and hydrogenated carbon-doped indium phosphide
001A74 (1997-10-01) Channel optical waveguides formed by deuterium passivation in GaAs and InP
001A84 (1997-09-29) Low-loss hydrogenated buried waveguide coupler integrated with a four-wavelength distributive Bragg reflector laser array on InP
001C76 (1997) Evaluation of the properties of hydrogenated InP/InGaAsP double heterostructure waveguides
001D68 (1996-08-15) Transport properties of hydrogenated p-GaInAs doped with carbon
002A19 (1991) Hydrogenation of InAs on GaAs heterostructures
002B53 (1990) Hydrogen neutralization of acceptors in highly doped GaInAs:Zn
002C38 (1989) Spectroscopic evidence for hydrogen-phosphorus pairing in zinc-doped InP containing hydrogen
002C69 (1989) Hydrogen passivation of shallow acceptors in p-type InP
003120 (1984) Comparative study of phonon modes in Ga1-xInxP and GaAsxP1-x alloys

List of associated KwdEn.i

Nombre de
documents		Descripteur
10Experimental study
6Hydrogen
6Semiconductor materials
5III-V semiconductors
5Passivation
4Hydrogenation
4Indium compounds
3Gallium arsenides
3Inorganic compound
3Photoluminescence
2Acceptor center
2Carbon
2Carrier density
2Charge carrier concentration
2Deuterium
2Doped materials
2Gallium Indium Arsenides Mixed
2Gallium phosphide
2Hall effect
2Heterojunction
2Indium Phosphides
2Infrared absorption
2Isotopic species
2Optical losses
2Secondary ion mass spectrometry
2Zinc
1Annealing
1Binary compound
1Boron
1Boron additions
1Carbon additions
1Charge carriers
1Chemical composition
1Chemical vapor deposition
1Concentration distribution
1Crystal defect
1Defect level
1Diamonds
1Distributed Bragg reflector lasers
1Donors
1Electron density
1Electron mobility
1Experiments
1Fiber optic networks
1Fourier transform spectroscopy
1Free carrier
1Free electron
1Gallium Arsenides
1Gallium Arsenides Phosphides
1Gallium Indium Phosphides Mixed
1Gallium compounds
1Heterojunction bipolar transistors
1Heterojunctions
1Hole mobility
1III-V compound
1Impurity
1Impurity density
1Impurity diffusion
1Impurity interaction
1Impurity pair
1Impurity states
1Indium Arsenides
1Indium additions
1Indium arsenides
1Indium phosphide
1Indium phosphides
1Infrared reflection
1Integrated optics
1Integrated optoelectronics
1Light absorption
1Light transmission
1Low temperature
1Microelectronic fabrication
1Neutralization
1Optical design techniques
1Optical planar waveguides
1Optoelectronic device
1P type conductivity
1Passive networks
1Phonon density of states
1Phonon mode
1Photoconductivity
1Photocurrents
1Plasma
1Pressure
1Quaternary compound
1Raman scattering
1Recovery(properties)
1Refractive index
1Semiconducting indium phosphide
1Semiconductor doping
1Semiconductor lasers
1Semiconductor waveguides
1Sputter etching
1Temperature
1Theoretical study
1Thermal annealing
1Thermodynamic stability
1Thick film
1Waveguide

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