Auteurs
Analysis
France
Racine
Analysis
France
Repository
Accueil
Racine
Racine

Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « J. C. Garcia »
Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.
J. C. Gachon < J. C. Garcia < J. C. Gauthler  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 19.
Ident.Authors (with country if any)Title
001236 (2001) Hydrogen-related effects in GaInP/GaAs HBTs: incorporation, removal and influence on device reliability
001737 (1999) Epitaxially stacked GaAs/GaAlAs lasers using a low-resistance tunnel junction
001A01 (1998) Growth characteristics of hydride-free chemical beam epitaxy and application to GaLnP/GaAs heterojunction bipolar transistors
002567 (1993) Room temperature 600mW CW output power per facet from single GaInAs/GaAs/GaInP large area laser diode grown by CBE
002659 (1993) High quality 0.98 μm GaInAs/GaAs/GaInP lasers growth by CBE using tertiarybutylarsine and tertiarybutylphosphine
002669 (1993) Formation of P precipitates during annealing of InP grown by gas source molecular beam epitaxy at low temperature
002691 (1993) Electrical properties of P-rich InP grown by gas source MBE
002693 (1993) Electrical conduction in low temperature grown InP
002694 (1993) Electrical conduction in low temperature grown InP
002725 (1993) Chemical beam epitaxy of Ga0.5In0.5P using tertiarybutylphosphine
002736 (1993) Band offsets of Ga0.5In0.5P/GaAs single quantum wells from pressure-induced type-II transitions
002911 (1992) Direct determination of the valence-band offsets at Ga0.47In0.53As/InP and InP/Ga0.47In0.53As heterostructures by ultraviolet photoemission spectroscopy
002973 (1991) Sulfur doping of GaAs and GaInP grown by metalorganic molecular beam epitaxy using a hydrogen sulfide gaseous source
002A03 (1991) Metal-organic molecular beam epitaxy of GaAs and Ga0.5In0.5P
002A04 (1991) Metal organic molecular beam epitaxy growth of Ga0.5In0.5P/GaAs quantum well structures
002A06 (1991) MOMBE growth of high quality GaAs/GaInP heterostructures
002A10 (1991) Kinetic study of metalorganic molecular beam epitaxy of GaP, InP, and GaxIn1-xP
002A65 (1991) Chemical beam epitaxy growth of GaAs/Ga0.5In0.5P heterostructures : growth kinetics, electrical and optical properties
002B35 (1990) MOMBE growth of high-quality InP and GalnAs bulk, heterojunction and quantum well layers

List of associated KwdEn.i

Nombre de
documents		Descripteur
12Epitaxy
11Experimental study
11Semiconductor materials
9Gallium Arsenides
8Gallium Indium Phosphides Mixed
8Inorganic compound
6Indium Phosphides
6Molecular beam condensation
5Heterojunction
4Chemical beam condensation
4Electrical properties
4Gallium Indium Arsenides Mixed
4Low temperature
4Quantum well
4Temperature
4Thin film
3Crystal growth
3Multiple quantum well
3Organometallic compound
3Photoluminescence
2Activation energy
2Annealing
2Band offset
2Binary compound
2Congress
2Doping
2Electrical conductivity
2Exciton
2Fermi level
2Gallium arsenides
2Growth from vapor
2Heterojunction transistor
2Kinetics
2Microelectronic fabrication
2Optical properties
2Output power
2Precipitate
2Reflection high energy electron diffraction
2Secondary ion mass spectrometry
2Semiconductor laser
2Ternary compound
2Transmission electron microscopy
1Aluminium arsenides
1Antisite defect
1Asymmetry
1Beryllium
1Binary compounds
1Binary system
1Bipolar transistor
1CBE method
1Carbon addition
1Carbon additions
1Characterization
1Charge carrier concentration
1Charge carrier recombination
1Charge carrier trapping
1Charge transfer
1Chemical beam epitaxy
1Concentration distribution
1Continuous wave
1Current gain
1Defect level
1Degradation
1Doped materials
1Electric conductivity
1Electron diffraction
1Electron mobility
1Energy gap
1Energy level population
1Envelope function
1Epitaxial film
1Excitation spectrum
1Frequency
1Frequency characteristic
1Gallium Indium Phosphides
1Gallium Phosphides
1Gallium compound
1Gallium phosphide
1Growth
1Growth mechanism
1Heterojunction bipolar transistors
1High pressure
1Hopping conductivity
1Hydrogenation
1III-V compound
1III-V semiconductors
1IV characteristic
1Impurity
1Impurity density
1Impurity level
1Indium arsenides
1Indium compound
1Indium phosphide
1Indium phosphides
1Injection laser
1Laser diodes
1Lattice parameters
1Manufacturing process
1Mismatch lattice
1Models

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/France/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i -k "J. C. Garcia" 

HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i  \
                -Sk "J. C. Garcia" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/France/Analysis/biblio.hfd

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    France
   |étape=   Analysis
   |type=    indexItem
   |index=    Author.i
   |clé=    J. C. Garcia
}}
Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024