B. Dal Zotto < B. Damilano < B. Dany

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 26.
[0-20] [0 - 20][0 - 26][20-25][20-40]

Ident.	Authors (with country if any)	Title
000126 (2012)		Growth optimization and characterization of lattice-matched Al0.82In0.18N optical confinement layer for edge emitting nitride laser diodes
000521 (2008)		Optimum annealing temperature versus nitrogen composition in InAs/(Ga, In) (N, As) quantum dots
000945 (2005)		Influence of carrier localization on the performance of MBE grown GaInNAs/GaAs QW light emitting diodes and laser diodes
000B69 (2004)		Comparison of the In distribution in InGaN/GaN quantum well structures grown by molecular beam epitaxy and metalorganic vapor phase epitaxy
000D55 (2003)		In surface segregation in InGaN/GaN quantum wells
000D98 (2003)		Cathodoluminescence study of the excitons localization in AlGaN/GaN and InGaN/GaN quantum wells grown on sapphire
000E82 (2002-01-21)		Large size dependence of exciton-longitudinal-optical-phonon coupling in nitride-based quantum wells and quantum boxes
000E99 (2002)		The effects of localization and of electric fields on LO-phonon-exciton coupling in InGaN/GaN quantum wells and quantum boxes
000F21 (2002)		Steady-state and time-resolved near-field optical spectroscopy of GaN/AlN quantum dots and InGaN/GaN quantum wells
000F53 (2002)		Optical investigations and absorption coefficient determination of InGaN/GaN quantum wells
001000 (2002)		In K-edge extended X-ray absorption fine structure of InGaN epilayers and quantum boxes
001078 (2001-09-15)		Influence of pressure on the optical properties of InxGa1-xN epilayers and quantum structures
001114 (2001-03-12)		Effects of GaAlN barriers and of dimensionality on optical recombination processes in InGaN quantum wells and quantum boxes
001115 (2001-02-26)		High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy
001175 (2001)		Photoluminescence excitation spectroscopy of MBE grown InGaN quantum wells and quantum boxes
001178 (2001)		Photoconductance measurements and Stokes shift in InGaN alloys
001185 (2001)		Optoelectronic characterization of blue InGaN/GaN LEDs grown by MBE
001230 (2001)		InGaN/GaN quantum wells grown by molecular beam epitaxy emitting at 300 K in the whole visible spectrum
001231 (2001)		InGaN heterostructures grown by molecular beam epitaxy : from growth mechanism to optical properties
001276 (2001)		Carrier dynamics in group-III nitride low-dimensional systems: Localization versus quantum-confined stark effect
001283 (2001)		Absorption and emission of (In, Ga)N/GaN quantum wells grown by molecular beam epitaxy

---

List of associated KwdEn.i

Nombre de documents	Descripteur
18	Experimental study
17	Photoluminescence
16	Gallium nitrides
16	Indium nitrides
16	Molecular beam epitaxy
14	Ternary compounds
13	III-V semiconductors
13	Quantum wells
11	Binary compounds
10	Quantum dots
10	Semiconductor materials
7	Indium compounds
6	Gallium compounds
5	Crystal growth from vapors
5	Semiconductor quantum wells
4	Semiconductor quantum dots
4	Thin films
4	Time resolved spectra
4	Wide band gap semiconductors
3	Electric field effects
3	Island structure
3	Luminescence
3	MOCVD
2	Absorption spectra
2	Aluminium nitrides
2	Charge carriers
2	Doping
2	Electron hole pair
2	Electron localization
2	Energy gap
2	Excitons
2	Gallium nitride
2	Growth mechanism
2	Heterojunctions
2	Indium arsenides
2	Laser diodes
2	Light emitting diodes
2	Line widths
2	Localized states
2	Modelling
2	Multilayers
2	Performance evaluation
2	Photoconductivity
2	Semiconductor growth
2	Semiconductor lasers
2	Stark effect
2	Stokes shift
2	Theoretical study
2	Transmission electron microscopy
2	XRD
1	Absorption coefficients
1	Aluminium compounds
1	Annealing
1	Atomic force microscopy
1	Binary compound
1	Buried layer
1	Carrier mobility
1	Cathodoluminescence
1	Desorption
1	Dislocation density
1	EXAFS spectrometry
1	Electric fields
1	Electroluminescence
1	Electron-hole recombination
1	Electron-phonon interactions
1	Electronic properties
1	Envelope function
1	Epitaxial layers
1	Excitation spectrum
1	Exciton phonon interaction
1	Fine structure
1	Fluctuations
1	Force microscopy
1	Gallium Indium Arsenides Mixed
1	Gallium arsenides
1	Heterostructures
1	High field
1	High-pressure effects
1	Holes
1	III-V compound
1	Image analysis
1	Impurity density
1	Indium nitride
1	Injection current
1	Interface states
1	Interlayers
1	Lattice parameters
1	Light emitting diode
1	Line intensity
1	Line shape
1	Local structure
1	Localization
1	Localized exciton
1	MOVPE method
1	Manufacturing process
1	Mechanical strength
1	Microstructure
1	Multilayer
1	Multiple quantum well
1	Nitrogen additions

---

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/France/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i -k "B. Damilano" 

HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i  \
                -Sk "B. Damilano" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/France/Analysis/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    France
   |étape=   Analysis
   |type=    indexItem
   |index=    Author.i
   |clé=    B. Damilano
}}

---

This area was generated with Dilib version V0.5.77. Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024