France < Grèce < Géorgie (pays)

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 21.
[0-20] [0 - 20][0 - 21][20-20][20-40]

Ident.	Authors (with country if any)	Title
000094 (2012)		Structure and strain state of polar and semipolar InGaN quantum dots
000097 (2012)		Structural properties of semipolar InGaN/GaN quantum dot superlattices grown by plasma-assisted MBE
000112 (2012)		Morphology and origin of V-defects in semipolar (11-22) InGaN
000188 (2011)		Origin of Low-Frequency Noise in the Low Drain Current Range of Bottom-Gate Amorphous IGZO Thin-Film Transistors
000217 (2011)		Growth and characterization of polar (0 0 0 1) and semipolar (11-22) InGaN/GaN quantum dots
000296 (2010)		Microstructure of N-face InN grown on Si (111) by plasma-assisted MBE using a thin GaN-AlN buffer layer
000515 (2008)		Processing and characterization of new oxysulfide glasses in the Ge-Ga-As-S-O system
000600 (2008)		Anti-binding of biexcitons in (21 1)B InAs/GaAs piezoelectric quantum dots
000766 (2006)		Structural properties of quaternary InAlGaN MQW grown by plasma-assisted MBE
000932 (2005)		Micro-raman characterization of InxGa1-xN/GaN/Al2O3 heterostructures
000943 (2005)		Interfacial structure of MBE grown InN on GaN
000A50 (2004-01-01)		Magnetic structure of CeRhIn5 as a function of pressure and temperature
000C17 (2003-08-18)		Tunable laser diodes by Stark effect
000D12 (2003)		Plasma-assisted MBE growth of quaternary InAlGaN quantum well heterostructures with room temperature luminescence
000E37 (2002-08-26)		Widely tunable light-emitting diodes by Stark effect in forward bias
000E80 (2002-01-28)		Photonic-crystal ultrashort bends with improved transmission and low reflection at 1.55 μm
000F73 (2002)		Models and measurements for the transmission of submicron-width waveguide bends defined in two-dimensional photonic crystals : Feature section on photonic crystal structures and applications
001773 (1999)		Antiferromagnetic intermetallic Tb2AgIn3
001E28 (1996-02-15)		Weak antilocalization and spin precession in quantum wells
002265 (1994-08-01)		Electrical transport quantum effects in the In0.53Ga0.47As/In0.52Al0.48As heterostructure on silicon
002622 (1993)		Materials problems for the development of InGaAs/InAlAs HEMT technology

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List of associated Author.i

Nombre de documents	Descripteur
1	A. Ajagunna
1	A. Delimitis
1	A. Dimoulas
1	A. G. Kontos
1	A. Georgakilas
1	A. Lotsari
1	A. P. Vajpeyi
1	Andreas Tsormpatzoglou
1	C. M. Soukoulis
1	C. Xenogianni
1	Charalabos A. Dimitriadis
1	Christoforos G. Theodorou
1	Costas M. Soukoulis
1	D. Cengher
1	E. Aperathitis
1	E. Dimakis
1	E. G. Moshopoulou
1	E. I. Kamitsos
1	E. Iliopoulos
1	E. Trichas
1	F. Kalaitzakis
1	G. Constantinidis
1	G. E. Dialynas
1	G. Halkias
1	G. Kittler
1	G. P Dimitrakopulos
1	G. P. Dimitrakopulos
1	I. Kerasiotis
1	J. K. Yakinthos
1	J. Kioseoglou
1	J. P. Semitelou
1	J. Siouris
1	K. Tsagaraki
1	K. Zekentes
1	M. Androulidaki
1	M. Dussauze
1	M. Kafesaki
1	Maria Kafesaki
1	N. T. Pelekanos
1	P. G. Savvidis
1	Ph. Komninou
1	S. Tsintzos
1	T. Koukoula
1	Th. Karakostas
1	Th. Kehagias
1	Y. S. Raptis
1	Z. Hatzopoulos

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