| Ident. | Authors (with country if any) | Title |
|---|
| 000C47 |
| Indium content measurements in metamorphic high electron mobility transistor structures by combination of x-ray reciprocal space mapping and transmission electron microscopy |
| 001007 |
| Growth optimisation of GaInN/GaN multiple quantum well structures: Application to RCLED devices |
| 001424 |
| Low tensile strain GaInAs : uid/GaAs : C superlattice heterostructures grown by LP MOCVD : application to GaInP/GaAs heterojunction bipolar transistor base layer |
| 002430 |
| Cross-slip in the first stages of plastic relaxation in InxGa1-xAs/GaAs heterostructures |
| 002570 |
| Raman scattering in InxGa1-xAs/GaAs superlattices grown by molecular beam epitaxy |
| 002A13 |
| Interactions of misfit dislocations in InxGa1-xAs/GaAs interfaces |
| 002A73 |
| A new type of misfit dislocation multiplication process in InxGa1-xAs/GaAs strained-layer superlattices |
| 002C50 |
| On the determination of the nature of misfit dislocations in semiconductor strained-layer heterostructures |
| 002C55 |
| Misfit dislocations in In0.15Ga0.85As/GaAs strained-layer superlattices |
