| Ident. | Authors (with country if any) | Title |
|---|
| 000E68 |
| Interpretation and theory of tunneling experiments on single nanostructures |
| 002322 |
| Role of localized interface states at type-II heterojunctions |
| 002683 |
| Electronic structure of crystalline InP oxides |
| 002B68 |
| Electronic structure of semiconductor oxides : InPO4, In(PO3)3, P2O5, SiO2, AlPO4, and Al(PO3)3 |
| 002D33 |
| Theoretical calculation of band-edge discontinuities near a strained heterojunction: application to (In,Ga)As/GaAs |
| 002E27 |
| Band-edge deformation potentials in a tight-binding framework |
| 002E70 |
| Theory of the chemical shift at relaxed (110) surfaces of III-V semiconductor compounds |
