| Ident. | Authors (with country if any) | Title |
|---|
| 000C63 |
| Two-dimensional photonic crystal coupled-defect laser diode |
| 000D62 |
| Growth and characterization of Si, S and Zn-doped InP in selective area growth conditions |
| 001328 |
| High-frequency properties of 1.55 μm laterally complex coupled distributed feedback lasers fabricated by focused-ion-beam lithography |
| 001536 |
| 1.55 μm single mode lasers with complex coupled distributed feedback gratings fabricated by focused ion beam implantation |
| 001640 |
| The quantum confined Pockels effect in InGaAs-based multi-quantum wells |
| 001785 |
| 1-m W CW-RT monolithic VCSEL at 1.55 μm |
| 001806 |
| 1.55 μm single-mode lasers with combined gain coupling and lateral carrier confinement by focused ion-beam implantation |
| 001858 |
| Inversion Asymmetry in Heterostructures of Zinc-Blende Semiconductors: Interface and External Potential versus Bulk Effects |
| 001A04 |
| GaAlAs/GaAs metamorphic Bragg mirror for long wavelength VCSELs |
| 001B84 |
| Undercut ridge structures : A novel approach to 1.3/1.55-μm vertical-cavity surface-emitting lasers |
| 001B93 |
| Theoretical optimization of V-shaped GaInAsP quantum-well lasers grown on InP substrates |
| 001E11 |
| Subband renormalization in dense electron-hole plasmas in In0.53Ga0.47As/InP quantum wires |
| 001F49 |
| Etching of deep V-groove channels on a (001) InP substrate and regrowth by gas source molecular beam epitaxy |
| 001F66 |
| Chemical beam etching of InP in GSMBE |
| 002035 |
| Photoluminescence study of band-gap alignment of intermixed InAsP/InGaAsP superlattices |
| 002064 |
| Direct measurement of lateral elastic modulations in a zero-net strained GaInAsP/InP multilayer |
| 002242 |
| Lateral subband transitions in the luminescence spectra of a one-dimensional electron-hole plasma in In0.53Ga0.47As/InP quantum wires |
| 002299 |
| Selective band-gap blueshifting of InGaAsP/InGaAs(P) quantum wells by thermal intermixing with phosphorus pressure and dielectric capping |
| 002427 |
| Deep etched InGaAs/InP quantum dots with strong lateral confinement effects |
| 002634 |
| Lateral thickness modulations in alternate tensile-compressive strained GaInAsP multilayers grown by gas source molecular beam epitaxy |
| 002635 |
| Lateral modulations in zero-net-strained GalnAsP multilayers growtn by gas source molecular-beam epitaxy |
| 002668 |
| Gas source molecular beam epitaxy of alternated tensile/compressive strained GaInAsP multiple quantum wells emitting at 1.5 μm |
| 002752 |
| 1.55 μm buried ridge stripe laser diodes grown by gas source molecular beam epitaxy |
| 002789 |
| Well-width dependence of the excitonic lifetime in strained III-V quantum wells |
| 002797 |
| Theoretical threshold lowering of compressively strained InGaAs/InGaAsP and GaInAsP/GaInAsP quantum-well lasers |
| 002858 |
| Intervalence band absorption in strained and unstrained InGaAs multiple quantum well structures |
| 002867 |
| Induced electrostatic confinement of the electron gas in tensile strained InGaAs/InGaAsP quantum well lasers |
| 002879 |
| In situ characterization of InP surfaces after low-energy hydrogen ion cleaning |
| 002888 |
| High performance InGaAsP/InP semiconductor quantum well lasers realized by gas source molecular beam epitaxy |
| 002A23 |
| High quality InP and In1-xGaxAsyP1-y grown by gas source MBE |
| 002B21 |
| Optoelectronic devices by gsmbe |
| 002B56 |
| High performance DFB-MQW lasers at 1•5 μm grown by GSMBE |
| 002D28 |
| Two-dimensional electron gas at a Ga0.47In0.53As/(AlxGa1-x)0.48In0.52As interface |
| 002F10 |
| Investigation of crystalline and optical properties of Al0.48In0.52As grown by molecular-beam expitaxy |
| 003032 |
| Double-heterojunction GaAlInAs/GaInAs bipolar transistor grown by molecular beam epitaxy |
| 003072 |
| Molecular beam epitaxial growth and optical properties of Ga0.47In0.53As/Al0.48In0.52As on InP and Ga1-xInxAs/GaAs on GaAs quantum wells |
