| Ident. | Authors (with country if any) | Title |
|---|
| 000023 |
| Spatial modulation of above-the-gap cathodoluminescence in InP nanowires |
| 000234 |
| Easy methods for the electropolymerization of porphyrins based on the oxidation of the macrocycles |
| 000346 |
| Competing nucleation mechanisms and growth of InAsSbP quantum dots and nano-pits on the InAs(100) surface |
| 000365 |
| A highly efficient single-photon source based on a quantum dot in a photonic nanowire |
| 000446 |
| High photocarrier mobility in ultrafast ion-irradiated In0.53Ga0.47As for terahertz applications |
| 000500 |
| Strain-induced InAsSbP islands and quantum dots grown by liquid phase epitaxy on a InAs(100) substrate |
| 000533 |
| New hints on the origin of quantum criticality in CeCoIn5: A Hall effect study |
| 000548 |
| Ion-irradiated Ino.53Ga0-47As photoconductive antennas for THz generation and detection at 1.55 μm wavelength : Recent developments in terahertz optoelectronics |
| 000651 |
| Nitride-based heterostructures grown by MOCVD for near-and mid-infrared intersubband transitions |
| 000670 |
| Interband light absorption and pauli blocking in InAs/GaAs quantum dots covered by InGaAs quantum wells |
| 000700 |
| Design and optimization of a monolithically integratable InP-based optical waveguide isolator |
| 000735 |
| 1.55μm InP-based electrically-pumped VECSELs : comparison of buried and implanted tunnel junctions as current confinement schemes for the realization of large diameter devices |
| 000752 |
| Towards a mid-infrared polaron laser using InAs/GaAs self-assembled quantum dots |
| 000808 |
| Intraband light absorption in InAs/GaAs quantum dots covered with InGaAs quantum wells |
| 000823 |
| Growth and characterization of AlInN/GaInN quantum wells for high-speed intersubband devices at telecommunication wavelengths |
| 000831 |
| Fabrication and characterization of 1.55 μm single transverse mode large diameter electrically pumped VECSEL |
| 000836 |
| Energy states in InAs-GaAs quantum dots-in-asymmetric-well infrared photodetector structure |
| 000853 |
| Chemically prepared well-ordered InP(001) surfaces |
| 000874 |
| The magnetic instability of Yb2Pd2(In, Sn) in a non-Fermi liquid environment |
| 000898 |
| Pump-probe analysis of polaron decay in InAs/GaAs self-assembled quantum dots |
| 000899 |
| Pump-probe analysis of polaron decay in InAs/GaAs self-assembled quantum dots |
| 000931 |
| Modeling of a novel InP-based monolithically integrated magneto-optical waveguide isolator |
| 000942 |
| Intraband polaron dynamics of excited carriers in InAs/InxAl1-xAs quantum dots |
| 000958 |
| Growth and characterization of In1-xMnxAs diluted magnetic semiconductors quantum dots |
| 000993 |
| Differential anomalous X-ray scattering studies of amorphous In-Se |
| 000A33 |
| Spectroscopy of the electronic states in InAs quantum dots grown on InxAl1-xAs/InP(001) |
| 000B99 |
| Ultrafast response (∼2.2 ps) of ion-irradiated InGaAs photoconductive switch at 1.55 μm |
| 000C10 |
| Band structures of GaAs, InAs, and Ge: A 24-k.p model |
| 000C15 |
| Structure of Extremely Nanosized and Confined In-O Species in Ordered Porous Materials |
| 000C29 |
| Enhanced photoconductive signal in InAs quantum dots due to plasma confined microcavities |
| 000C38 |
| Dynamic saturation of an intersublevel transition in self-organized InAs/InxAl1-xAs quantum dots |
| 000C82 |
| The equilibrium phase diagram of the copper-indium system: a new investigation |
| 000D13 |
| Photoconductive spectral analysis of InAs quantum dot under normal incidence |
| 000D41 |
| Light absorption and emission in InAs/GaAs quantum dots and stepped quantum wells |
| 000D46 |
| Infrared photodetection with semiconductor self-assembled quantum dots |
| 000E30 |
| Dephasing of intersublevel polarizations in InAs/GaAs self-assembled quantum dots |
| 000E31 |
| Band structures of Ge and InAs: A 20 k.p model |
| 000E50 |
| Temperature dependence of intersublevel absorption in InAs/GaAs self-assembled quantum dots |
| 000E67 |
| Long Polaron Lifetime in InAs/GaAs Self-Assembled Quantum Dots |
| 001022 |
| EuZn2Si2 and EuZn2Ge2 grown from Zn or Ga(In)/Zn flux |
| 001070 |
| Comparison of light- and heavy-ion-irradiated quantum-wells for use as ultrafast saturable absorbers |
| 001095 |
| Luttinger-like parameter calculations |
| 001106 |
| Midinfrared absorption and photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots |
| 001110 |
| Second-harmonic generation resonant with s-p transition in InAs/GaAs self-assembled quantum dots |
| 001145 |
| Terahertz-frequency intraband absorption in semiconductor quantum dot molecules |
| 001203 |
| Mid-infrared second-order nonlinear susceptibility in InAs/GaAs quantum dots |
| 001217 |
| Intersublevel emission in InAs/GaAs quantum dots |
| 001220 |
| Infrared spectroscopy of self-organized InAs nanostructures grown on InAlAs/InP(001) for infrared photodetection applications |
| 001275 |
| Characterisation and optimisation of MBE grown arsenide/antimonide interfaces |
| 001282 |
| Adsorption sites at Cs nanowires grown on the InAs(110) surface |
| 001342 |
| Ultrafast saturable absorption at 1.55 μm in heavy-ion-irradiated quantum-well vertical cavity |
| 001343 |
| Electroluminescence of composite channel InAlAs/InGaAs/InP/InAlAs high electron mobility transistor |
| 001347 |
| Infrared second-order optical susceptibility in InAs/GaAs self-assembled quantum dots |
| 001378 |
| Structure of Fe layers grown on InAs(100) |
| 001386 |
| Strain relaxation in surface nano-structures studied by X-ray diffraction methods |
| 001497 |
| Midinfrared unipolar photoluminescence in InAs/GaAs self-assembled quantum dots |
| 001511 |
| Strain relaxation in surface nano-structures studied by X-ray diffraction methods |
| 001545 |
| Midinfrared second-harmonic generation in p-type InAs/GaAs self-assembled quantum dots |
| 001581 |
| Third-harmonic generation in InAs/GaAs self-assembled quantum dots |
| 001603 |
| Strong normal-incidence infrared absorption in self-organized InAs/InAlAs quantum dots grown on InP(001) |
| 001630 |
| X-ray structure investigation of lateral surface nanostructures : a full quantitative analysis of non-uniform lattice strain |
| 001651 |
| Study of the Ag-In-Te ternary system. II. Description of the quadrilateral Ag-Ag2Te-In2Te3-In |
| 001652 |
| Study of the Ag-In-Te ternary system. I. Description of the triangle Ag2Te-In2Te3-Te |
| 001790 |
| Saturation of intraband absorption and electron relaxation time in n-doped InAs/GaAs self-assembled quantum dots |
| 001817 |
| Resonant excitation of intraband absorption in InAs/GaAs self-assembled quantum dots |
| 001A03 |
| Gate-induced spin precession in an In0.53Ga0.47As two dimensional electron gas |
| 001A49 |
| Observation of strain relaxation phenomena in buried and nonburied III-V surface gratings through high resolution x-ray diffraction |
| 001A50 |
| Observation of strain relaxation phenomena in buried and nonburied III-V surface gratings through high resolution x-ray diffraction |
| 001A62 |
| Intraband absorption in n-doped InAs/GaAs quantum dots |
| 001A73 |
| Infrared spectroscopy of intraband transitions in self-organized InAs/GaAs quantum dots |
| 001C09 |
| SiO evaporated films topography and nematic liquid crystal orientation |
| 001D45 |
| Isostructural phase transition in InN wurtzite |
| 001D66 |
| Comment on ′′Accurate refractive index measurements of doped and undoped InP by a grating coupling technique′′ [Appl. Phys. Lett. 67, 881 (1995)] |
| 001D78 |
| Low temperature electroluminescence spectroscopy of high electron mobility transistors on InP |
| 001E22 |
| Local aspects of the As-stabilized 2×3 reconstructed (001) surface of strained Inx Ga1-xAs alloys: A first-principles study |
| 001E85 |
| Reconstruction and chemical ordering at the surface of strained (In, Ga)As epilayers |
| 001F45 |
| Extended tunability of a self-seeded gain-switched InGaAsP laser using an intracavity absorber |
| 001F51 |
| Enhancements and degradations in ultrashort gate GaAs and InP HEMTs properties at cryogenic temperatures : an overview |
| 001F74 |
| Angular momentum of conduction electron states |
| 001F97 |
| Commensurate and incommensurate phases at reconstructed (In,Ga)As(001) surfaces: x-ray diffraction evidence for a composition lock-in |
| 002035 |
| Photoluminescence study of band-gap alignment of intermixed InAsP/InGaAsP superlattices |
| 002063 |
| Electroluminescence spectroscopy of AlGaAs/InGaAs and AlGaAs/GaAs high-electron-mobility transistors |
| 002299 |
| Selective band-gap blueshifting of InGaAsP/InGaAs(P) quantum wells by thermal intermixing with phosphorus pressure and dielectric capping |
