Serveur d'exploration sur l'Indium - Analysis (Chine)

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List of bibliographic references

Number of relevant bibliographic references: 25.
[0-20] [0 - 20][0 - 25][20-24][20-40]
Ident.Authors (with country if any)Title
000004 (2014) The influence of perpendicular transport behavior on the properties of n-i-p type amorphous silicon solar cells
000048 (2013) a-IGZO TFTs With Inductively Coupled Plasma Chemical Vapor Deposited SiOx Gate Dielectric
000053 (2013) Unique UV-Erasable In-Ga-Zn-O TFT Memory With Self-Assembled Pt Nanocrystals
000084 (2013) Temperature and gate bias dependence of carrier transport mechanisms in amorphous indium-gallium-zinc oxide thin film transistors
000117 (2013) Room-temperature pulsed laser deposition and dielectric properties of amorphous Bi3.95Er0.05Ti3O12 thin films on conductive substrates
000180 (2013) Memristive Properties of Transparent (La, Sr)MnO3 Thin Films Deposited on ITO Glass at Room Temperature
000186 (2013) Low-Temperature Solution-Processed Zirconium Oxide Gate Insulators for Thin-Film Transistors
000205 (2013) Influence of Tungsten Doping on the Performance of Indium-Zinc-Oxide Thin-Film Transistors
000287 (2013) Effect of O2 Flow Rate During Channel Layer Deposition on Negative Gate Bias Stress-Induced Vth Shift of a-IGZO TFTs
000296 (2013) Dependence of the optoelectronic properties of selenium-hyperdoped silicon on the annealing temperature
000359 (2012) Two novel orange cationic iridium(III) complexes with multifunctional ancillary ligands used for polymer light-emitting diodes
000776 (2011) New amorphous small molecules-Synthesis, characterization and their application in bulk heterojunction solar cells
000835 (2011) High-Performance Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors With HfOxNy/HfO2/HfOxNy Tristack Gate Dielectrics
000892 (2011) Electrical and Photosensitive Characteristics of a-IGZO TFTs Related to Oxygen Vacancy
000954 (2011) Amorphous indium zinc oxide thin film transistors with poly-4-vinylphenol gate dielectric layers
000969 (2011) A Novel Indium-Boron Amorphous Alloy Mediator for Barbier-Type Carbonyl Allylation in Aqueous Medium
000B19 (2010) Influence of the channel layer thickness on electrical properties of indium zinc oxide thin-film transistor
000C98 (2009) Synthesis, photoluminescent and electroluminescent properties of a novel europium(III) complex involving both hole-and electron-transporting functional groups
000D36 (2009) Spectroscopic ellipsometry study of In2O3 thin films
001071 (2008) Pentacene thin-film transistors with sol-gel derived amorphous Ba0.6Sr0.4TiO3 gate dielectric
001142 (2008) Fluorene-based Tröger's base analogues : Potential electroluminescent materials

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