Wide band < Wide band gap semiconductors < Williamson-Hall plot

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 75.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000167 (2013)		New wide-bandgap organic donor and its application in UVB sensors with high responsivity
000188 (2013)		Large energy band-gap tuning of 980 nm InGaAs/InGaAsP quantum well structure via quantum well intermixing
000246 (2013)		Graphene quantum dots-incorporated cathode buffer for improvement of inverted polymer solar cells
000487 (2012)		Integrated ZnO nanotube arrays as efficient dye-sensitized solar cells
000764 (2011)		Optical spectroscopy of lanthanides doped in wide band-gap semiconductor nanocrystals
000765 (2011)		Optical spectroscopy of lanthanides doped in wide band-gap semiconductor nanocrystals
000F47 (2009)		Bright and color-saturated quantum dot light-emitting diodes, new star for next generation displays and solid state lighting
001048 (2008)		Red organic light-emitting diodes based on wide band gap emitting material as the host utilizing two-step energy transfer
001129 (2008)		Highly efficient red phosphorescence from dopant polymer light emitting diodes based on mixed-ligand ruthenium(II) complex
001131 (2008)		High-efficiency red and green light-emitting polymers based on a novel wide bandgap poly(2,7-silafluorene)
001328 (2007)		Photon emitting, absorption and reconstruction of photons
001475 (2007)		Characteristics of ITO films fabricated on glass substrates by high intensity pulsed ion beam method
001622 (2006)		Growth of In2O3 single-crystalline film on sapphire (0001) substrate by molecular beam epitaxy
001872 (2004-06-28)		Investigations on V-defects in quaternary AlInGaN epilayers
001873 (2004-06-28)		Improvements of InGaN/GaN quantum-well interfaces and radiative efficiency with InN interfacial layers
001876 (2004-06-21)		Luminescence efficiency of InGaN multiple-quantum-well ultraviolet light-emitting diodes
001878 (2004-06-15)		20 meV-deep donor level in InN film of 0.76 eV band gap grown by plasma-assisted nitrogen source
001879 (2004-06-07)		Ultrafast valence intersubband hole relaxation in InGaN multiple-quantum-well laser diodes
001884 (2004-05-15)		Cluster size and composition variations in yellow and red light-emitting InGaN thin films upon thermal annealing
001885 (2004-05-10)		Indium-assisted synthesis on GaN nanotubes
001886 (2004-05-10)		Heteroepitaxial growth of wurtzite InN films on Si(111) exhibiting strong near-infrared photoluminescence at room temperature

---

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Chine/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/KwdEn.i -k "Wide band gap semiconductors" 

HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/KwdEn.i  \
                -Sk "Wide band gap semiconductors" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Chine/Analysis/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Chine
   |étape=   Analysis
   |type=    indexItem
   |index=    KwdEn.i
   |clé=    Wide band gap semiconductors
}}

---

This area was generated with Dilib version V0.5.77. Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024