Voltage measurement < Voltage threshold < Voltammetry

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 24.
[0-20] [0 - 20][0 - 24][20-23][20-40]

Ident.	Authors (with country if any)	Title
000053 (2013)		Unique UV-Erasable In-Ga-Zn-O TFT Memory With Self-Assembled Pt Nanocrystals
000067 (2013)		Transparent Junctionless Electric-Double-Layer Transistors Gated by a Reinforced Chitosan-Based Biopolymer Electrolyte
000122 (2013)		Rational Design of Sub-Parts per Million Specific Gas Sensors Array Based on Metal Nanoparticles Decorated Nanowire Enhancement-Mode Transistors
000186 (2013)		Low-Temperature Solution-Processed Zirconium Oxide Gate Insulators for Thin-Film Transistors
000249 (2013)		Flexible Dual-Gate Oxide TFTs Gated by Chitosan Film on Paper Substrates
000287 (2013)		Effect of O2 Flow Rate During Channel Layer Deposition on Negative Gate Bias Stress-Induced Vth Shift of a-IGZO TFTs
000319 (2013)		Bistable memory devices with lower threshold voltage by extending the molecular alkyl-chain length
000475 (2012)		Low-Voltage Junctionless Oxide-Based Thin-Film Transistors Self-Assembled by a Gradient Shadow Mask
000601 (2012)		Conductivity switching and memory effect in polymer brushes with carbazole pendant moieties
000804 (2011)		Influences of channel metallic composition on indium zinc oxide thin-film transistor performance
000834 (2011)		High-Performance Indium-Gallium-Zinc Oxide Thin-Film Transistors Based on Anodic Aluminum Oxide
000848 (2011)		Gate bias stress stability under light irradiation for indium zinc oxide thin-film transistors based on anodic aluminium oxide gate dielectrics
000889 (2011)		Electrical switching characteristics of organic thin films made from branch chain substituted oligomer as measured by Gain probe
000892 (2011)		Electrical and Photosensitive Characteristics of a-IGZO TFTs Related to Oxygen Vacancy
000944 (2011)		Anomalous Threshold Voltage Shift and Surface Passivation of Transparent Indium-Zinc-Oxide Electric-Double-Layer TFTs
000954 (2011)		Amorphous indium zinc oxide thin film transistors with poly-4-vinylphenol gate dielectric layers
000B19 (2010)		Influence of the channel layer thickness on electrical properties of indium zinc oxide thin-film transistor
000B37 (2010)		High-performance ZnO thin film transistors with sputtering SiO2/Ta2O5/SiO2 multilayer gate dielectric
000B65 (2010)		Enhancement of electrical performance in In2O3 thin-film transistors by improving the densification and surface morphology of channel layers
001071 (2008)		Pentacene thin-film transistors with sol-gel derived amorphous Ba0.6Sr0.4TiO3 gate dielectric
001117 (2008)		Indium oxide thin film transistors via reactive sputtering using metal targets

---

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Chine/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/KwdEn.i -k "Voltage threshold" 

HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/KwdEn.i  \
                -Sk "Voltage threshold" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Chine/Analysis/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Chine
   |étape=   Analysis
   |type=    indexItem
   |index=    KwdEn.i
   |clé=    Voltage threshold
}}

---

This area was generated with Dilib version V0.5.77. Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024