VLS growth < VPE < VRLA battery

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 44.
[0-20] [0 - 20][0 - 44][20-40]

Ident.	Authors (with country if any)	Title
000160 (2013)		Optical properties of InN films grown by pressurized-reactor metalorganic vapor phase epitaxy
000304 (2013)		Continuous-Flow MOVPE of Ga-Polar GaN Column Arrays and Core-Shell LED Structures
000823 (2011)		Improvement of structural and luminescence properties in InGaN/GaN multiple quantum wells by symmetrical thin low temperature-GaN layers
000F24 (2009)		Design and epitaxy of structural III-nitrides
000F53 (2009)		Annealing behaviors of long-wavelength InAs/GaAs quantum dots with different growth procedures by metalorganic chemical vapor deposition
001238 (2008)		A novel butt-joint scheme for the preparation of electro-absorptive lasers
001265 (2007)		The high mobility InN film grown by MOCVD with GaN buffer layer
001329 (2007)		Photoluminescence study of AlGaInP/GaInP quantum well intermixing induced by zinc impurity diffusion
001400 (2007)		Fabrication of InGaAlAs MQW buried heterostructure lasers by narrow stripe selective MOVPE
001420 (2007)		Electronic band structures and transport properties of wurtzite indium nitride grown by metalorganic vapor phase epitaxy
001456 (2007)		Design and performance of monolithic integrated electro-absorption modulated distributed feedback laser
001477 (2007)		Catalyst-free synthesis of vertically aligned screw-shape InZnO nanorods array
001478 (2007)		Butt-coupled MOVPE growth for high-performance electro-absorption modulator integrated with a DFB laser
001987 (2004)		MOVPE growth of grade-strained bulk InGaAs/InP for broad-band optoelectronic device applications
001988 (2004)		MOVPE growth and fabrication of 1.3 μm high power InGaAsP-InP polarization-insensitive superluminescent diodes with complex strained quantum wells
001A25 (2004)		Effects of TMIn flow on the interface and optical properties of InGaN/GaN mutiple quantum wells
001A65 (2003-10-27)		Improvement of near-ultraviolet InGaN/GaN light-emitting diodes by inserting an in situ rough SiNx interlayer in n-GaN layers
001B03 (2003-04)		High-Indium-Content InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes
001B23 (2003)		Void formation and failure in InGaN/AlGaN double heterostructures
001B46 (2003)		Structural and optical properties of InAlGaN films grown directly on low-temperature buffer layer with (0 0 0 1) sapphire substrate
001C56 (2002-11-15)		Growth of High-Quality Epitaxial InN Film with High-Speed Reactant Gas by Organometallic Vapor-Phase Epitaxy

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