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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Keywords » - entrée « Time resolution »
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Time of flight method < Time resolution < Time resolved spectra  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 15.
Ident.Authors (with country if any)Title
000225 (2013) Improved Quantum Efficiency in Semipolar (1101) InGaN/GaN Quantum Wells Grown on GaN Prepared by Lateral Epitaxial Overgrowth
000656 (2011) Ultrafast hot carrier dynamics in InN epitaxial films
000718 (2011) Shallow-Deep InGaN Multiple-Quantum-Well System for Dual-Wavelength Emission Grown on Semipolar (1122) Facet GaN
000823 (2011) Improvement of structural and luminescence properties in InGaN/GaN multiple quantum wells by symmetrical thin low temperature-GaN layers
000A69 (2010) Photoluminescence investigation of InAs quantum dots in quantum well with different strain reducing layer
000B38 (2010) High Brightness GaN Light Emitting Diodes with Different Barrier Widths in Quantum Wells for General Lighting Application
000C21 (2010) Characterization of optoelectronic properties of the ZnO nanorod array using surface photovoltage technique
000F94 (2008) Third-order nonlinearities in GeSe2-In2Se3-CsI glasses for telecommunications applications
001331 (2007) Photoluminescence dynamics and structural investigation of InGaN/GaN multiple quantum well light emitting diodes grown by metalorganic chemical vapor deposition
001557 (2006) Role of deep traps in carrier generation and transport in differently doped InP wafers
001944 (2004) Study of the photoexcited carrier dynamics in InP:Fe using time-resolved reflection and photoluminescence spectra
001B98 (2003) Growth temperature effect on the optical and material properties of AlxInxGa1-x-yN epilayers grown by MOCVD
002135 (2000) Carrier capture into InAs/GaAs quantum dots detected by a simple degenerate pump-probe technique
002283 (1999) Effect of growth interruption on the optical properties of InAs/GaAs quantum dots
002369 (1998) Photoexcited carrier diffusion dependence of differential reflection dynamics in InAsxP1-x/InP (x ≤ 0.35) strained-multiple-quantum wells

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