Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Keywords » - entrée « Threshold current »
Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.
Threshold < Threshold current < Threshold detection  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 37.
[0-20] [0 - 20][0 - 37][20-36][20-40]
Ident.Authors (with country if any)Title
000078 (2013) The effects of injector doping densities on lasing properties of InP-based quantum cascade lasers at 4.3 μm
000850 (2011) GaAs-based long-wavelength InAs quantum dots on multi-step-graded InGaAs metamorphic buffer grown by molecular beam epitaxy
000A39 (2010) Strained InGaAs/GaAs Quantum-Well Laser Emitting at 1054 nm
000A80 (2010) Optical bistability in InP/InAlGaAs multi-quantum-well semiconductor ring lasers
000B12 (2010) Investigation on multiple-port microcylinder lasers based on coupled modes
000E08 (2009) Metamorphic InGaAs telecom lasers on GaAs
000E77 (2009) Fabrication and Characterization of 1.3-μm InAs Quantum-Dot VCSELs and Monolithic VCSEL Arrays
000F77 (2009) 1.3-μm InAs Quantum Dot Vertical Cavity Surface Emitting Lasers with Planar Electrodes Configuration
001238 (2008) A novel butt-joint scheme for the preparation of electro-absorptive lasers
001358 (2007) Metamorphic growth of 1.25-1.29 μm InGaAs quantum well lasers on GaAs by molecular beam epitaxy
001368 (2007) Key issues associated with low threshold current density for InP-based quantum cascade lasers
001385 (2007) High-power InGaAs VCSEL's single devices and 2-D arrays
001404 (2007) Experimental and numerical study on AlGaInAs/AlGaAs distributed feedback lasers with GaInP gratings
001405 (2007) Equilateral-triangle-resonator injection lasers with directional emission
001444 (2007) Effect of inter-level relaxation and cavity length on double-state lasing performance of quantum dot lasers
001456 (2007) Design and performance of monolithic integrated electro-absorption modulated distributed feedback laser
001523 (2006) Temperature dependence of interband transition energy in InGaAsN strain-compensated quantum-well and ridge-waveguide lasers fabricated with pulsed anodic oxidation
001591 (2006) Monolithic integration of electroabsorption modulator and DFB laser for 10-Gb/s transmission
001693 (2006) A 1.5 μm n-type InGaAsP/InGaAsP modulation-doped multiple quantum well DFB laser by MOCVD
001798 (2005) InGaAs/InGaAsP microavity laser with directional output waveguide
001806 (2005) High-volume production of 650nm GaInP/AlGaInP laser diodes

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Chine/Analysis
HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/KwdEn.i -k "Threshold current" 
HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/KwdEn.i  \
                -Sk "Threshold current" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Chine/Analysis/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Chine
   |étape=   Analysis
   |type=    indexItem
   |index=    KwdEn.i
   |clé=    Threshold current
}}

Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024