Tensile strength < Tensile stress < Tensile tests

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 22.
[0-20] [0 - 20][0 - 22][20-21][20-40]

Ident.	Authors (with country if any)	Title
000250 (2013)		Flexible CuS nanotubes-ITO film Schottky junction solar cells with enhanced light harvesting by using an Ag mirror
000253 (2013)		First principles calculations for band-gap energy properties of non-polar and semi-polar ternary nitride alloys under in-plane strain
000713 (2011)		Spin splitting modulated by uniaxial stress in InAs nanowires
000D22 (2009)		Study on Polarization Dependency of InAs Quantum Dot Coupled InGaAsP Quantum Well SOA
000E48 (2009)		Growth of InAs/GaSb type-II superlattices by gas-source molecular-beam epitaxy
000F06 (2009)		Effect of annealing temperature on the structure and optical properties of In-doped ZnO thin films
000F41 (2009)		Characteristics of ZnO:In thin films prepared by RF magnetron sputtering
001062 (2008)		Piezoresistivity in GaAs/InxGa1-xAs/AlAs superlattice structures
001235 (2008)		A strained InGaAs/InAlAs coupled quantum well with polarization-independent large positive electro-refractive index change
001274 (2007)		The characteristics of GaN-based blue LED on Si substrate
001512 (2006)		Theoretical study of phase separation in wurtzite InGaN
001603 (2006)		Influence of dislocation stress field on distribution of quantum dots
001674 (2006)		Crack control in GaN grown on silicon (111) using in doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition
001974 (2004)		Optimization of InGaAsP-InP tensile strained multiple quantum-well structures emitting at 1.34 μm
001988 (2004)		MOVPE growth and fabrication of 1.3 μm high power InGaAsP-InP polarization-insensitive superluminescent diodes with complex strained quantum wells
001A06 (2004)		High power polarization-insensitive 1.3 μm InGaAsP-InP quantum-well superluminescent emission diodes grown by MOVPE
001D48 (2002)		Optical properties of nanocrystalline Ga1-xInxSb/SiO2 films
002119 (2000)		Effect of thin GaAs tensile-strained layer on InAs quantum dots on InP (001) substrate grown by LP-MOVPE
002213 (1999)		Using the tensile stress field to control quantum dot arrangements
002357 (1998)		Spontaneously ordered InAs self-assembled quantum dots grown on GaAs/InP substrate
002511 (1997)		Grid-pattern aligned InAs self-assembled quantum dots grown on InP substrate

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