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Serveur d'exploration sur l'Indium - Analysis (Chine)

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List of bibliographic references

Number of relevant bibliographic references: 47.
[0-20] [0 - 20][0 - 47][20-40]
Ident.Authors (with country if any)Title
001E63 (2001-03) Microtwin formation mechanism in GaP/AlGaInP/GaAs double heterostructure light-emitting diodes
001F02 (2001) Structural anisotropy and optical properties of InxGa1-xAs quantum dots on GaAs(001)
001F04 (2001) Structural and electrochemical characterization of open-structured' ITO films
001F12 (2001) Preparation and optical properties of InAs0.4P0.6 nanocrystal alloy embedded in SiO2 thin films
001F23 (2001) Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0≤x≤0.3) layer
001F49 (2001) Fabrication and optical absorption of ordered indium oxide nanowire arrays embedded in anodic alumina membranes
001F81 (2001) A mild solvothermal route to chalcopyrite quaternary semiconductor CuIn(SexS1-x)2 nanocrystallites
001F92 (2000-11-06) Carrier distribution and relaxation-induced defects of InAs/GaAs quantum dots
002009 (2000-06-26) Effects of thermal annealing on the luminescence and structural properties of high indium-content InGaN/GaN quantum wells
002024 (2000-04-01) Erasing Mechanisms of Ag-In-Sb-Te Compact Disk (CD)-Rewritable
002038 (2000-02-01) Strain relaxation in In0.2Ga0.8As/GaAs quantum-well structures by x-ray diffraction and photoluminescence
002040 (2000-01-17) Stimulated emission study of InGaN/GaN multiple quantum well structures
002053 (2000) The structural and photoluminescence properties of self-organized quantum dots in InAs/In0.53 Ga0.47 As multilayer on InP substrate
002058 (2000) Temperature dependence of electron redistribution in modulation-doped InAs/GaAs quantum dots
002076 (2000) Preparation and optical properties of SiO2 thin films containing InP nanocrystals
002097 (2000) Highly ordered nanostructures of single crystalline GaN nanowires in anodic alumina membranes
002098 (2000) High-performance strain-compensated InGaAs/InAlAs quantum cascade lasers
002130 (2000) Cross-sectional high-resolution transmission electron microscopy of the microstructure of electrochromic nickel oxide
002137 (2000) Annealing effect on the surface morphology and photoluminescence of InGaAs/GaAs quantum dots grown by molecular beam epitaxy
002160 (1999-11-08) Arsenic clusters on the surface of vertically aligned InAs islands on GaAs substrate by annealing
002162 (1999-11) Influence of growth temperature of InAsP/InP strained multiple quantum wells grown by metalorganic chemical vapor deposition

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