Surface wave < Surfaces < Surfactant

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List of bibliographic references

Number of relevant bibliographic references: 22.
[0-20] [0 - 20][0 - 22][20-21][20-40]

Ident.	Authors (with country if any)	Title
001823 (2005)		Electron energy loss spectroscopy, low energy electron diffraction, and auger electron spectroscopy study of indium overlayers on Si(111) and Si(100) surfaces
001B29 (2003)		The evolution of InAs/InAlAs/InGaAlAs quantum dots after rapid thermal annealing
001B35 (2003)		Surface melting of polycrystals Pb and In within 1 K below melting temperature
001D18 (2002)		The structure and current-voltage characteristics of multi-sheet InGaN quantum dots grown by a new multi-step method
001D36 (2002)		Strain relaxation of InP film directly grown on GaAs patterned compliant substrate
001D37 (2002)		Statistical investigation on morphology development of gallium nitride in initial growth stage
001D84 (2002)		Effect on the optical properties and surface morphology of cubic GaN grown by metalorganic chemical vapor deposition using isoelectronic indium surfactant doping
002055 (2000)		The effect of substrate orientation on the morphology of InAs nanostructures on (0 0 1) and (1 1 n)A/B (n = 1-5) InP substrates
002057 (2000)		Temperature dependence of the optical properties of InAs/GaAs self-organized quantum dots with bimodal size distribution
002095 (2000)		In situ annealing treatment and In-doping of GaN epilayers grown by MOVPE
002137 (2000)		Annealing effect on the surface morphology and photoluminescence of InGaAs/GaAs quantum dots grown by molecular beam epitaxy
002146 (2000)		1.35 μm photoluminescence from In0.5Ga0.5As/GaAs islands grown by molecular beam epitaxy via cycled (InAs)1/(GaAs)1 monolayer deposition
002228 (1999)		Substrate surface atomic structure influence on the growth of InAlAs quantum dots
002408 (1998)		Growth and characterization of InAs-rich GaInAsSb alloys on GaSb substrates by MOCVD
002413 (1998)		Effects of growth temperature on highly mismatched InAs grown on GaAs substrates by MBE
002476 (1997)		Two kinds of crystalline state of InSb epilayers on GaAs substrates by metalorganic chemical vapor deposition
002505 (1997)		Isotropic growth islands of Ga0.16In0.84As0.80Sb0.20 epilayer grown by metalorganic chemical vapour deposition
002588 (1996)		The effect of III-V ratio at the substrate surface on the quality of InP grown by GSMBE
002589 (1996)		Study of GaInAsSb epilayer by scanning electron acoustic microscopy
002593 (1996)		Scanning electron acoustic microscopy of semiconductor materials
002692 (1995)		Valence-band offset at InxGa1-xAs/GaAs heterojunctions under different strain conditions

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