Surface segregation < Surface states < Surface stresses

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 23.
[0-20] [0 - 20][0 - 23][20-22][20-40]

Ident.	Authors (with country if any)	Title
000008 (2014)		Surface state and optical property of sulfur passivated InP
000041 (2014)		Amorphous indium tin oxide films deposited on flexible substrates by facing target sputtering at room temperature
000096 (2013)		Surface roughness induced electron mobility degradation in InAs nanowires
000171 (2013)		N-doped rutile TiO2 nano-rods show tunable photocatalytic selectivity
000320 (2013)		Band Edge Modulation and Light Emission in InGaN Nanowires Due to the Surface State and Microscopic Indium Distribution
000477 (2012)		Low temperature growth of nanoblade In2O3 thin films by plasma enhanced chemical vapor deposition: Morphology control and lithium storage properties
000576 (2012)		Effect of growth temperature on surface morphology and structure of InAs/GaSb superlattices grown by metalorganic chemical vapor deposition
000837 (2011)		High quality InAlN/GaN heterostructures grown on sapphire by pulsed metal organic chemical vapor deposition
000866 (2011)		Epitaxial Growth of High Quality Nonpolar InN Films on LiGaO2 Substrates
000B96 (2010)		Effect of triethanolamine and sodium dodecyl sulfate on the formation of CuInSe2 thin films by electrodeposition
001163 (2008)		Electron-phonon interaction effects on the surface states in wurtzite nitride semiconductors
001359 (2007)		Metamorphic InGaAs quantum wells for light emission at 1.3-1.6 μm
001A90 (2003-06-16)		Surface band-bending effects on the optical properties of indium gallium nitride multiple quantum wells
001C67 (2002-08-15)		First-principles identification of quasi-two-dimensional Fermi surface nesting on a metallic c(2×2)-In/Cu(001) surface
001F98 (2000-10)		InP (110) by Time-resolved XPS
002052 (2000)		Time-resolved measurement of surface band bending of cleaved GaAs(110) and InP(110) by high resolution XPS
002165 (1999-10-01)		Band gap state formation in InP (110) induced by 10 and 100 eV argon ion bombardment
002175 (1999-08-01)		Determination of surface state density for GaAs and InAlAs by room temperature photoreflectance
002202 (1999-01-25)		Enhanced hole injection in a bilayer vacuum-deposited organic light-emitting device using a p-type doped silicon anode
002495 (1997)		Scanning tunneling microscopy of III-V compound semiconductor (001) surfaces
002598 (1996)		Photoluminescence enhancement of (NH4)2Sx passivated InP surface by rapid thermal annealing

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