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Serveur d'exploration sur l'Indium - Analysis (Chine)

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Superlattice period < Superlattices < Superluminescent diodes  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 39.
[0-20] [0 - 20][0 - 39][20-38][20-40]
Ident.Authors (with country if any)Title
000020 (2014) Interface layer control and optimization of InAs/GaSb type-II superlattices grown by molecular beam epitaxy
000217 (2013) InAs/GaSb type-II superlattice mid-wavelength infrared focal plane array detectors grown by molecular beam epitaxy
000269 (2013) Electrical properties of the absorber layer for mid, long and very long wavelength detection using type-II InAs/GaSb superlattice structures grown by molecular beam epitaxy
000419 (2012) Self-consistent simulation of carrier confinement characteristics in (AlyGa1-yN/AlN)SLs/GaN/(InxGa1-xN/GaN)MQW/GaN heterostructures
000576 (2012) Effect of growth temperature on surface morphology and structure of InAs/GaSb superlattices grown by metalorganic chemical vapor deposition
000802 (2011) Interface effect on the electronic structure and optical properties of InAs/GaSb superlattices
000852 (2011) First-principles study of InAs, InxGa1-xSb nanotubes and InAs/InxGa1-xSb nanotube superlattices
000B60 (2010) Evaluation of the In concentration of an InxGa1-xSb alloy layer in cross-sectional HRTEM images of III-V semiconductor superlattices
000C12 (2010) Design for new structure InAs/InxGa1-xSb superlattice two-color-short and long wavelength infrared photodetector
000C90 (2009) The effect of Sr on the properties of Y-doped ceria electrolyte for IT-SOFCs
000D51 (2009) Raman property of In doped ZnO superlattice nanoribbons
000D67 (2009) Precise growth control and characterization of strained AlInAs and GaInAs for quantum cascade lasers by GSMBE
000E48 (2009) Growth of InAs/GaSb type-II superlattices by gas-source molecular-beam epitaxy
000F24 (2009) Design and epitaxy of structural III-nitrides
000F33 (2009) Crystal Structure of In2O3(ZnO)m Superlattice Wires and Their Photoluminescence Properties
000F58 (2009) Alloy phase separation in InAs/InAlAs/InP nanostructure superlattices studied by finite element calculation
001062 (2008) Piezoresistivity in GaAs/InxGa1-xAs/AlAs superlattice structures
001360 (2007) MBE growth of very short period InAs/GaSb type-II superlattices on (0 0 1)GaAs substrates
001770 (2005) Optical properties of digital-alloy In0.49(Ga1-zAlz)0.51P/GaAs and InGaP/In0.49(Ga1-zAlz)0.51P multi-quantum wells grown by molecular-beam epitaxy
001863 (2005) A novel method for positioning of InAs islands on GaAs (110)
001977 (2004) Optical characteristics of InAs quantum dots capped with short period GaAs/InAs superlattices and InGaAs combination layers

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