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Serveur d'exploration sur l'Indium - Analysis (Chine)

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Stress distribution < Stress effects < Stress relaxation  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 19.
Ident.Authors (with country if any)Title
000069 (2013) Tilt generation and phase separation in metamorphic GaInP buffers grown on GaAs substrates by metal-organic chemical vapor deposition
000242 (2013) Growth of metamorphic InGaP layers on GaAs substrates
000287 (2013) Effect of O2 Flow Rate During Channel Layer Deposition on Negative Gate Bias Stress-Induced Vth Shift of a-IGZO TFTs
000442 (2012) Piezo-Phototronic Effect on Electroluminescence Properties of p-Type GaN Thin Films
000541 (2012) Experimental Investigation of Border Trap Generation in InGaAs nMOSFETs With Al2O3 Gate Dielectric Under PBTI Stress
000664 (2011) Theoretical study on critical thicknesses of InGaN grown on (0 0 0 1) GaN
000F44 (2009) Calculation of phase diagrams in AlxIn1-xAs/InP, AsxSb1-xAl/InP and AIxIn1-xSb/InSb nano-film systems
000F62 (2009) A study of two-step growth and properties of In0.82Ga0.18As on InP
001463 (2007) Crystal-originated particles in germanium-doped Czochralski silicon crystal
001569 (2006) Piezomodulated reflectance study of self-assembled InAs quantum dots-in-a-well
001598 (2006) Kinetic Monte Carlo simulation of spatially ordered growth of quantum dots on patterned substrate
001610 (2006) Improved quality of InGaN/GaN multiple quantum wells by a strain relief layer
001687 (2006) Anomalous temperature dependence of photoluminescence peak energy in InAs/InAlAs/InP quantum dots
001726 (2005) Surface morphology of GaInP buffer layers and its impact on the lateral distribution of self-organized InP islands
001987 (2004) MOVPE growth of grade-strained bulk InGaAs/InP for broad-band optoelectronic device applications
001C66 (2002-08-15) Strain-induced semimetal-semiconductor transition in InAs/GaSb broken-gap quantum wells
001D48 (2002) Optical properties of nanocrystalline Ga1-xInxSb/SiO2 films
002001 (2000-09-15) Influence of InxGa1-xAs (0≤x≤0.3) Cap Layer on Structural and Optical Properties of Self-assembled InAs/GaAs Quantum Dots
002041 (2000-01-03) Coherent Acoustic Phonon Oscillations in Semiconductor Multiple Quantum Wells with Piezoelectric Fields

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