Strained layer < Strained quantum well < Strained superlattice

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List of bibliographic references

Number of relevant bibliographic references: 50.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000A06 (2010)		Temperature dependence of photoluminescence from as-grown and plasma-etched InAs0.45P0.55/In0.68Ga0.32As0.45P0.55 strained single quantum well
000D22 (2009)		Study on Polarization Dependency of InAs Quantum Dot Coupled InGaAsP Quantum Well SOA
000F48 (2009)		Band Engineering in Strained GaN/ultrathin InN/GaN Quantum Wells
001217 (2008)		Built-in electric field effect on the linear and nonlinear intersubband optical absorptions in InGaN strained single quantum wells
001235 (2008)		A strained InGaAs/InAlAs coupled quantum well with polarization-independent large positive electro-refractive index change
001523 (2006)		Temperature dependence of interband transition energy in InGaAsN strain-compensated quantum-well and ridge-waveguide lasers fabricated with pulsed anodic oxidation
001581 (2006)		Optical properties of InGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy
001747 (2005)		Room temperature 1.25 μm emission from high indium content InxGa1-xAs/GaAs quantum wells grown by molecular beam epitaxy
001815 (2005)		GSMBE growth and characterizations of AlInP/InGaAsP strain-compensated multiple-layer heterostructures
001869 (2005)		980 nm high power strained quantum well lasers array fabricated by MBE
001943 (2004)		Study on the effects of well number on temperature characteristics in 1.3-μm InGaAsP-InP quantum-well lasers
001974 (2004)		Optimization of InGaAsP-InP tensile strained multiple quantum-well structures emitting at 1.34 μm
001988 (2004)		MOVPE growth and fabrication of 1.3 μm high power InGaAsP-InP polarization-insensitive superluminescent diodes with complex strained quantum wells
001A50 (2004)		1310 nm AlGaInAs-InP polarization insensitive multiple quantum well optical amplifier
001C48 (2003)		A simple model for optimization design of high performance In1-x-yGayAlxAs strained MQW DFB lasers
001C53 (2003)		1.55 μm AlGaInAs/InP polarization-insensitive optical amplifier with tensile strained wells grown by MOCVD
001D63 (2002)		InAsyP1-y/InP quantum wells grown by solid source molecular beam epitaxy using As2 and As4
001E82 (2001)		The vertical beam quality of GaInP/AlGaInP strained multiple quantum well laser
001F09 (2001)		Quasi RT-CW operation of InGaAs/InGaAsP strained quantum well lasers
001F62 (2001)		Design of the active structure of high-performance 1.55-μm In1-x-yGayAlxAs strained MQW lasers
001F69 (2001)		Band structures and characteristics of InGaAs/InGaAsP strain-compensated quantum well lasers

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