Serveur d'exploration sur l'Indium - Analysis (Chine)

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List of bibliographic references

Number of relevant bibliographic references: 8.
Ident.Authors (with country if any)Title
000217 (2013) InAs/GaSb type-II superlattice mid-wavelength infrared focal plane array detectors grown by molecular beam epitaxy
001518 (2006) The role of Sb in the molecular beam epitaxy growth of 1.30-1.55 μm wavelength GaInNAs/GaAs quantum well with high indium content
001776 (2005) Molecular beam epitaxy growth and photoluminescence study of room temperature 1.31 μm (InyGa1-yAs/GaAs1-xSbx)/GaAs bilayer quantum wells
001832 (2005) Effect of layer thickness of immiscible alloy In0.52Al0.48As on the morphology of InAs nanostructure grown on In0.52Al0.48As/InP (001)
001C23 (2003) Effect of annealing on the structure and optical properties of InGaAs/GaAs quantum dots
001D34 (2002) Structure and optical properties of self-assembled InAs/GaAs quantum dots with In0.15Ga0.85As underlying layer
001D63 (2002) InAsyP1-y/InP quantum wells grown by solid source molecular beam epitaxy using As2 and As4
001E87 (2001) Temperature and injection current dependencies of 2 μm InGaAsSb/AlGaAsSb multiple quantum-well ridge-waveguide lasers

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