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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Keywords » - entrée « Semiconductor thin films »
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Semiconductor technology < Semiconductor thin films < Semiconductor-metal boundaries  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 22.
[0-20] [0 - 20][0 - 22][20-21][20-40]
Ident.Authors (with country if any)Title
000F44 (2009) Calculation of phase diagrams in AlxIn1-xAs/InP, AsxSb1-xAl/InP and AIxIn1-xSb/InSb nano-film systems
001877 (2004-06-15) Identifying Au-based Te alloys for optical data storage
001884 (2004-05-15) Cluster size and composition variations in yellow and red light-emitting InGaN thin films upon thermal annealing
001914 (2004-02-23) Observation of spontaneous ordering in the optoelectronic material GaInNP
001A60 (2003-11-10) Thermal annealing effects on an InGaN film with an average indium mole fraction of 0.31
001A75 (2003-09-01) Aluminum-doped zinc oxide films as transparent conductive electrode for organic light-emitting devices
001B04 (2003-04) GaN Metal-Semiconductor-Metal Visible-Blind Photodetectors with Transparent Indium-Tin-Oxide Contact Electrodes
001B08 (2003-03-03) Strong green luminescence in quaternary InAlGaN thin films
001C77 (2002-07-01) Investigation of transparent and conductive undoped Zn2In2O5-x films deposited on n-type GaN layers
001E25 (2001-11-01) Bistable characteristic and current jumps in field electron emission of nanocrystalline diamond films
001E39 (2001-08-15) Thermal-Treatment Induced Deep Electron Traps in AlInP
001E54 (2001-04-30) GaN and InGaN Metal-Semiconductor-Metal Photodetectors with Different Schottky Contact Metals
001E57 (2001-04-01) Nanoscale surface electrical properties of indium-tin-oxide films for organic light emitting diodes investigated by conducting atomic force microscopy
001E97 (2001) Surface and interface analysis of tris-(8-hydroxyquinoline) aluminum and indium-tin-oxide using atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS)
001F99 (2000-09-18) Detection of terahertz radiation from longitudinal optical phonon-plasmon coupling modes in InSb film using an ultrabroadband photoconductive antenna
002148 (1999-12-20) Electron drift mobility and electroluminescent efficiency of tris(8-hydroxyquinolinolato) aluminum
002196 (1999-03) Growth and characterization of high-quality InAs0.86Sb0.05P0.09 alloy by liquid-phase epitaxy
002201 (1999-02) Influence of sapphire nitridation on properties of indium nitride prepared by metalorganic vapor phase epitaxy
002204 (1999-01-11) Majority- and minority-carrier traps in Te-doped AlInP
002302 (1998-10) Optical and electrical properties of Sn-doped indium oxide films deposited on polyester by reactive evaporation
002307 (1998-09) Raman and X-ray studies of InN films grown at different temperatures by metalorganic vapor phase epitaxy

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