Semiconductor quantum dots < Semiconductor quantum wells < Semiconductor quantum wires

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List of bibliographic references

Number of relevant bibliographic references: 113.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000E40 (2009)		Highly efficient four-wave mixing via intersubband transitions in InGaAs/AlAs coupled double quantum well structures
001610 (2006)		Improved quality of InGaN/GaN multiple quantum wells by a strain relief layer
001873 (2004-06-28)		Improvements of InGaN/GaN quantum-well interfaces and radiative efficiency with InN interfacial layers
001876 (2004-06-21)		Luminescence efficiency of InGaN multiple-quantum-well ultraviolet light-emitting diodes
001881 (2004-06)		Electroluminescent Studies of Emission Characteristics of InGaAsN/GaAs Injection Lasers in a Wide Temperature Range
001889 (2004-05)		Study of AlGaInP multiquantum-well/double heterostructure light-emitting diodes with In-added GaP window layer regrown by antimony-based liquid phase epitaxy
001890 (2004-05)		InGaN/AlGaN near-ultraviolet multiple quantum well light-emitting diodes with p-InGaN tunneling contact layer
001897 (2004-04-05)		Observation of coherent interfacial optical phonons in GaInP/GaAs/GaInP single quantum wells
001898 (2004-04-05)		Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions
001900 (2004-04)		InGaN/GaN Multi-Quantum Well Metal-Insulator Semiconductor Photodetectors with Photo-CVD SiO2 Layers
001903 (2004-03-29)		Mapping of multiple-quantum-well layers and structure of V defects in InGaN/GaN diodes
001905 (2004-03-15)		Landau level structures and semimetal-semiconductor transition in strained InAs/GaSb quantum wells
001915 (2004-02-23)		Comment on Piezoelectric effect on Al0.35-δInδGa0.65N/GaN heterostructures [Appl. Phys. Lett. 80, 2684 (2002)]
001916 (2004-02-16)		Electroreflectance study on the polarization field in InGaN/AlInGaN multiple quantum wells
001983 (2004)		Mode Characteristics of Semiconductor Equilateral Triangle Microcavities With Side Length of 5-20 μm
001A56 (2003-12-15)		Comparison of 1.3-μm AlGaInAs/AlGaInAs Strain-Compensated Multiple-Quantum-Well Laser Diodes with/without GaInAsP and AIGaInAs Graded-Composition Layers
001A59 (2003-11-15)		Electron-beam-induced current and cathodoluminescence characterization of InGaAs strain-balanced multiquantum well photovoltaic cells
001A67 (2003-10-15)		Ordering effects on optical transitions in GaxIn1-xP/(Al0.66Ga0.34)yIn1-yP quantum wells studied by photoluminescence and reflectivity spectroscopy
001A74 (2003-09-01)		Piezoelectric, electro-optical, and photoelastic effects in InxGa1-xN/GaN multiple quantum wells
001A76 (2003-09-01)		Absorption of surface acoustic waves by a two-dimensional electron gas in the presence of spin-orbit interaction
001A90 (2003-06-16)		Surface band-bending effects on the optical properties of indium gallium nitride multiple quantum wells

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