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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Keywords » - entrée « Semiconductor doping »
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Semiconductor doped glasses < Semiconductor doping < Semiconductor epitaxial layers  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 18.
Ident.Authors (with country if any)Title
000372 (2012) The effects of tris(2-phenylpyridine) iridium on the hole injection and transport properties of 4,4',4"-tri(N-carbazolyl)-triphenylamine thin films
001240 (2008) A facile and efficient method for rapid detection of trace nitroaromatics in aqueous solution†
001894 (2004-04-19) Deep-ultraviolet emission from an InGaAs semiconductor laser
001898 (2004-04-05) Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions
001A70 (2003-10) Silicon Doping Induced Increment of Quantum Dot Density
001B20 (2003) Zn doping into InP induced by Nd: YAG continuous wave laser
001C91 (2002-04-15) High-efficiency white organic light-emitting devices with dual doped structure
001E36 (2001-09) Enhanced luminance of ZnGa2O4 phosphor by In2O3 doping
001E73 (2001-01-15) The Effects of Super-Steep-Retrograde Indium Channel Profile on Deep Submicron n-Channel Metal-Oxide-Semiconductor Field-Effect Transistor
001F96 (2000-10-15) High-Temperature Breakdown Characteristics of δ-Doped In0.49Ga0.51P/GaAs/In0.25Ga0.75As/AlGaAs High Electron Mobility Transistor
002036 (2000-02-14) Electrical characterization of isoelectronic In-doping effects in GaN films grown by metalorganic vapor phase epitaxy
002091 (2000) Investigation of a new catalytic combustion-type CH4 gas sensor with low power consumption
002093 (2000) InP-based enhancement-mode pseudomorphic HEMT with strained In0.45Al0.55As barrier and In0.75Ga0.25As channel layers
002174 (1999-08-15) A dopant-related defect in Te-doped AlInP
002183 (1999-07) Mg-related deep levels in AlInP
002308 (1998-08-03) Isoelectronic In-doping effect in GaN films grown by metalorganic chemical vapor deposition
002443 (1997-10-15) Enhanced real-space transfer in δ-doped GaAs/In0.1Ga0.9As/In0.25Ga0.75As two-step channel heterojunctions
002460 (1997-05-12) The enhancement of InGaAs Schottky barrier height by the addition of Pr2O3 and In2O3 in the liquid phase epitaxy

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