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Serveur d'exploration sur l'Indium - Analysis (Chine)

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Semiconducting indium compounds < Semiconducting indium gallium arsenide < Semiconducting indium oxides  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 9.
Ident.Authors (with country if any)Title
001983 (2004) Mode Characteristics of Semiconductor Equilateral Triangle Microcavities With Side Length of 5-20 μm
001A13 (2004) Fabrication of 1.55-μm Si-based resonant cavity enhanced photodetectors using Sol-Gel bonding
001D24 (2002) The correlation between the low-frequency electrical noise of high-power quantum well lasers and devices surface non-radiative current
001E84 (2001) The keys to get high transconductance of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs devices
001F30 (2001) Influence of wavelength detuning on device performance of electroabsorption modulator integrated distributed feedback lasers based on identical epitaxial layer approach
002071 (2000) Room temperature (34 °C) operation of strain-compensated quantum cascade lasers
002093 (2000) InP-based enhancement-mode pseudomorphic HEMT with strained In0.45Al0.55As barrier and In0.75Ga0.25As channel layers
002117 (2000) Effects of distance between wells on band structure and characteristics of InGaAs/InGaAsP strain-compensated multiple quantum well lasers
002270 (1999) High-performance, graded-base AlGaAs/InGaAs collector-up heterojunction bipolar transistors using a novel selective area regrowth process

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