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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Keywords » - entrée « Schottky barriers »
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Schottky barrier solar cells < Schottky barriers < Schottky contact materials  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 28.
[0-20] [0 - 20][0 - 28][20-27][20-40]
Ident.Authors (with country if any)Title
000250 (2013) Flexible CuS nanotubes-ITO film Schottky junction solar cells with enhanced light harvesting by using an Ag mirror
000510 (2012) High-Efficiency Ferroelectric-Film Solar Cells with an n-type Cu2O Cathode Buffer Layer
000939 (2011) Bipolar and unipolar resistive switching in Zn0.98Cu0.02O films
000B70 (2010) Energy band alignment between Pb(Zr,Ti)O3 and high and low work function conducting oxides-from hole to electron injection
001007 (2008) Temperature-dependent characteristics of Pt Schottky contacts on n-type HgInTe
001065 (2008) Photoelectric characteristics of metal/InGaN/GaN heterojunction structure
001326 (2007) Photovoltaic effects in InGaN structures with p-n junctions
001496 (2007) "Positive" and "negative" electric-pulse-induced reversible resistance switching effect in Pr0.7Ca0.3MnO3 films
001A72 (2003-09-15) Properties of Cu/Au Schottky contacts on InGaP layer
001B01 (2003-05) Depletion- and enhancement-mode In0.49Ga0.51P/InGaAs/AlGaAs high-electron-mobility transistors with high-breakdown voltage
001B04 (2003-04) GaN Metal-Semiconductor-Metal Visible-Blind Photodetectors with Transparent Indium-Tin-Oxide Contact Electrodes
001C20 (2003) Effect of surface treatments on Schottky contact on n-AlxGa1-xN/GaN heterostructures
001C76 (2002-07-15) Microstructure evolution and failure mechanism for Cu/Au Schottky contacts to InGaP layer
001D04 (2002-02-01) Investigation of the thermal degradation mechanism for Cu/Au Schottky contacts to the InGaP layer
001D05 (2002-02-01) Characteristics of δ-doped InP heterostructures using In0.34Al0.66As0.85Sb0.15 Schottky layer
001E35 (2001-09) Surface analysis of (NH4)2Sx-treated InGaN using x-ray photoelectron spectroscopy
001E54 (2001-04-30) GaN and InGaN Metal-Semiconductor-Metal Photodetectors with Different Schottky Contact Metals
001E67 (2001-02-15) Surface Passivation Using P2S5/(NH4)2Sx and Hydrogen Fluoride Solutions on Ag/n-InAs and Ag/n-InSb Schottky Diodes
001E75 (2001-01-15) An Improved In0.34Al0.66As0.85Sb0.15/InP Heterostructure Utilizing Coupled δ-Doping InP Channel
002150 (1999-12-01) Temperature-dependent characteristics of the inverted delta-doped V-shaped InGaP/InxGa1-xAs/GaAs pseudomorphic transistors
002151 (1999-12-01) Temperature-dependent characteristics of the inverted delta-doped V-shaped InGaP/InxGa1-xAs/GaAs pseudomorphic transistors

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