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Serveur d'exploration sur l'Indium - Analysis (Chine)

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List of bibliographic references

Number of relevant bibliographic references: 13.
Ident.Authors (with country if any)Title
001A63 (2003-11) Comparative hydrogen sensing performances of Pd- and Pt-InGaP metal-oxide-semiconductor Schottky diodes
001E33 (2001-09-15) Gamma-Ray Induced Deep Electron Traps in GaInP
001E67 (2001-02-15) Surface Passivation Using P2S5/(NH4)2Sx and Hydrogen Fluoride Solutions on Ag/n-InAs and Ag/n-InSb Schottky Diodes
002029 (2000-03) Voltage and frequency dependence of differential capacitance in relaxed In0.2Ga0.8As/GaAs schottky diodes
002036 (2000-02-14) Electrical characterization of isoelectronic In-doping effects in GaN films grown by metalorganic vapor phase epitaxy
002039 (2000-02-01) Carrier depletion by defects levels in relaxed In0.2Ga0.8As/GaAs quantum-well Schottky diodes
002093 (2000) InP-based enhancement-mode pseudomorphic HEMT with strained In0.45Al0.55As barrier and In0.75Ga0.25As channel layers
002154 (1999-12-01) Barrier height enhancement of Ag/n-GaAs and Ag/n-InP Schottky diodes prepared by P2S5/(NH4)2Sx and HF treatments
002194 (1999-03-08) The optical and electrical studies of hydrogen passivation in GaInP/GaAs heterostructures
002460 (1997-05-12) The enhancement of InGaAs Schottky barrier height by the addition of Pr2O3 and In2O3 in the liquid phase epitaxy
002654 (1995-07-01) Experimental study on the Er/p-InP Schottky barrier
002655 (1995-07-01) A double metal structure Pt/Al/n-InP diode
002682 (1995-02-15) Schottky barrier heights of InxAl1-xAs (0≤x≤0.35) epilayers on GaAs

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