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Serveur d'exploration sur l'Indium - Analysis (Chine)

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Radiative properties < Radiative recombination < Radiative transition  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 18.
Ident.Authors (with country if any)Title
000101 (2013) Study of Ultraviolet Emission Enhancement in AlxInyGa1-x-yN Quaternary Alloy Film
000123 (2013) Radiative recombination of carriers in the GaxIn1-xP/GaAs double-junction tandem solar cells
000158 (2013) Performance Enhancement of Blue InGaN Light-Emitting Diodes With InGaN Barriers and Dip-Shaped Last Barrier
000225 (2013) Improved Quantum Efficiency in Semipolar (1101) InGaN/GaN Quantum Wells Grown on GaN Prepared by Lateral Epitaxial Overgrowth
000324 (2013) Analysis of Nonradiative Carrier Recombination Processes in InN Films by Mid-infrared Spectroscopy
000543 (2012) Enhancement of light-emission efficiency of ultraviolet InGaN/GaN multiple quantum well light emitting diode with InGaN underlying layer
000560 (2012) Electrical, spectral and optical performance of yellow-green and amber micro-pixelated InGaN light-emitting diodes
000718 (2011) Shallow-Deep InGaN Multiple-Quantum-Well System for Dual-Wavelength Emission Grown on Semipolar (1122) Facet GaN
000D85 (2009) Optical properties studies in InGaN/GaN multiple-quantum well
001010 (2008) Temperature dependence of PL spectrum in researching InGaAs/GaAs single quantum well
001120 (2008) In Situ Growth of Self-Assembled and Single In2O3 Nanosheets on the Surface of Indium Grains
001362 (2007) Luminescence degradation of InGaN/GaN violet LEDs
001571 (2006) Photoluminescence characteristics of low indium composition InGaN thin films grown on sapphire by metalorganic chemical vapor deposition
001807 (2005) High-temperature electron-hole liquid and dynamics of Fermi excitons in a In0.65Al0.35As/Al0.4Ga0.6As quantum dot array
001944 (2004) Study of the photoexcited carrier dynamics in InP:Fe using time-resolved reflection and photoluminescence spectra
001947 (2004) Study of photoluminescence and absorption in phase-separation InGaN films
001B46 (2003) Structural and optical properties of InAlGaN films grown directly on low-temperature buffer layer with (0 0 0 1) sapphire substrate
002711 (1995) Influence of doped poly(N-vinylcarbazole) on poly(3-octylthiophene) electroluminescence

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