Serveur d'exploration sur l'Indium - Analysis (Chine)

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List of bibliographic references

Number of relevant bibliographic references: 153.
[0-20] [0 - 20][0 - 50][20-40]
Ident.Authors (with country if any)Title
000059 (2013) Two dimensional electron gas mobility limited by scattering of quantum dots with indium composition transition region in quantum wells
000073 (2013) Theoretical analysis of the inter-diffusion coefficients in the AlGaInP material quantum well intermixing
000119 (2013) Resolving exciton diffusion in InGaAs quantum wells using micro-photoluminescence mapping with a lateral excitation
000242 (2013) Growth of metamorphic InGaP layers on GaAs substrates
000358 (2012) Two-colour mid-infrared absorption in InAs/GaSb type II and broken-gap quantum wells under gated electric field
000446 (2012) Phonon and electron-hole plasma effects on binding energies of excitons in wurtzite GaN/InxGa1-xN quantum wells
000520 (2012) Growth and characterization of InGaN nanodots hybrid with InGaN/GaN quantum wells
000530 (2012) Finite barrier width effects on exciton states and optical properties in wurtzite InGaN/GaN quantum well
000619 (2012) Anomalous spin-orbit coupling in high-density two-dimensional electron gas confined in InGaAs/InAlAs quantum well
000650 (2011) Voltage-controlled spin precession in InAs quantum wells
000744 (2011) Polaronic Effect on the Electron Energy Spectrum in a Wurtzite InxGa1-xN/GaN Quantum Well
000823 (2011) Improvement of structural and luminescence properties in InGaN/GaN multiple quantum wells by symmetrical thin low temperature-GaN layers
000A69 (2010) Photoluminescence investigation of InAs quantum dots in quantum well with different strain reducing layer
000A80 (2010) Optical bistability in InP/InAlGaAs multi-quantum-well semiconductor ring lasers
000A94 (2010) Magneto-optical absorption by InAs/GaSb-based type II and broken-gap quantum well
000B06 (2010) Large blue shift of the absorption edge in modified potential InGaAs/InAIAs coupled quantum wells
000B17 (2010) Integration of GaAs /In0.1Ga0.9As/AlAs resonance tunneling heterostructures into micro-electro-mechanical systems for sensor applications
000B42 (2010) Gate-controlled electron-electron interactions in an In0.53Ga0.47As/InP quantum well structure
000B86 (2010) Electro-optical effects in strain-compensated InGaAs/InAlAs coupled quantum wells with modified potential
000C32 (2010) An InP based wide gain spectrum asymmetric quantum wells for large scale optoelectronic monolithic integration
000C87 (2009) The effects of indium segregation on the valence band structure and optical gain of GaInAs/GaAs quantum wells

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