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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Keywords » - entrée « Photoreflectance »
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Photoreceptor < Photoreflectance < Photorefractive crystal  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 16.
Ident.Authors (with country if any)Title
001207 (2008) Compositional and temperature dependence of the energy band gap of CuxInySe2 epitaxial layers
001A67 (2003-10-15) Ordering effects on optical transitions in GaxIn1-xP/(Al0.66Ga0.34)yIn1-yP quantum wells studied by photoluminescence and reflectivity spectroscopy
001A93 (2003-06-02) Temperature dependence of photoreflectance in InAs/GaAs quantum dots
001C74 (2002-07-15) Photoreflectance and photoluminescence spectroscopy of the lattice-matched InGaAs/InAlAs single quantum well
001D13 (2002) Tuning of exciton-photon coupling in a planar semiconductor microcavity by applying hydrostatic pressure
001E23 (2001-11-01) Polarized-photoreflectance characterization of an InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor structure
001F85 (2000-12-18) Influence of dual incorporation of In and N on the luminescence of GaInNAs/GaAs single quantum wells
002006 (2000-07-15) Room temperature polarized photoreflectance characterization of GaAlAs/InGaAs/GaAs high electron mobility transistor structures including the influence of strain relaxation
002175 (1999-08-01) Determination of surface state density for GaAs and InAlAs by room temperature photoreflectance
002185 (1999-06-15) Room-temperature photoreflectance and photoluminescence characterization of the AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with varied quantum well compositional profiles
002299 (1998-11) BCl3/Ar reactive ion etching for gate recessing of GaInP/InGaAs/GaAs pseudomorphic high electron mobility transistors
002309 (1998-08-01) Photoreflectance spectroscopy of strained-layer (111)B InGaAs/GaAs quantum well diodes
002331 (1998-04-01) Analysis of Fermi level pinning and surface state distribution in InAlAs heterostructures
002335 (1998-03-09) Characterization of piezoelectric (111)B InGaAs/GaAs p-i-n quantum well structures using photoreflectance spectroscopy
002445 (1997-10-15) Built-in electric field and surface Fermi level in InP surface-intrinsic n+ structures by modulation spectroscopy
002458 (1997-05-15) Characteristics of InxGa1-xAs/GaAs pseudomorphic modulation doped field effect transistor

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