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Serveur d'exploration sur l'Indium - Analysis (Chine)

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Photodetector < Photodetectors < Photodiode  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 38.
[0-20] [0 - 20][0 - 38][20-37][20-40]
Ident.Authors (with country if any)Title
000274 (2013) Effects of growth temperature and buffer scheme on characteristics of InP-based metamorphic InGaAs photodetectors
000350 (2012) Zinc Oxide Nanowire As an Electron-Extraction Layer for Broadband Polymer Photodetectors with an Inverted Device Structure
000509 (2012) High-Performance UV-Visible-NIR Broad Spectral Photodetectors Based on One-Dimensional In2Te3 Nanostructures
000733 (2011) Probing into the effect of Auger recombination mechanism on zero bias resistance-area product in In1-xGaxAs detector
000749 (2011) Photoelectron Characteristics of HgInTe Detector
000C12 (2010) Design for new structure InAs/InxGa1-xSb superlattice two-color-short and long wavelength infrared photodetector
000D52 (2009) Quantum well infrared photodetector Simultaneously working in the two atmospheric windows
000D81 (2009) Performance of gas source MBE-grown wavelength-extended InGaAs photodetectors with different buffer structures
000E66 (2009) Fiber Grating Sensors Demodulation Technique using a Linear Array of Photodetectors
000E96 (2009) Electrical and Photoresponse Properties of an Intramolecular p-n Homojunction in Single Phosphorus-Doped ZnO Nanowires
001065 (2008) Photoelectric characteristics of metal/InGaN/GaN heterojunction structure
001086 (2008) Near-infrared photodetectors based on mercury indium telluride single crystals
001153 (2008) Etch pits observation and In distribution in mercury indium telluride single crystals
001256 (2007) Two-colour mid-infrared absorption in an InAs/GaSb-based type II and broken-gap quantum well
001892 (2004-05) DC and Noise Characteristics of 4H-SiC Metal-Semiconductor-Metal Ultraviolet Photodetectors
001900 (2004-04) InGaN/GaN Multi-Quantum Well Metal-Insulator Semiconductor Photodetectors with Photo-CVD SiO2 Layers
001989 (2004) Long Wavelength Resonant Cavity Photodetector Based on InP/Air-Gap Bragg Reflectors
001A13 (2004) Fabrication of 1.55-μm Si-based resonant cavity enhanced photodetectors using Sol-Gel bonding
001A51 (2004) 1.57-μm InP-based resonant-cavity-enhanced photodetector with InP/AIR-gap Bragg reflectors
001A84 (2003-07-28) Transport characteristics of InAs/GaAs quantum-dot infrared photodetectors
001B04 (2003-04) GaN Metal-Semiconductor-Metal Visible-Blind Photodetectors with Transparent Indium-Tin-Oxide Contact Electrodes

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