Keywords
Analysis
Chine
Racine
Analysis
Chine
Repository
Accueil
Racine
Racine

Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Keywords » - entrée « Phosphorus compounds »
Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.
Phosphorus compound < Phosphorus compounds < Phosphorus heterocycle  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 40.
[0-20] [0 - 20][0 - 40][20-40]
Ident.Authors (with country if any)Title
001893 (2004-05) Characterization of Large-Area AlGaInP/Mirror/Si Light-Emitting Diodes Fabricated by Wafer Bonding
001A56 (2003-12-15) Comparison of 1.3-μm AlGaInAs/AlGaInAs Strain-Compensated Multiple-Quantum-Well Laser Diodes with/without GaInAsP and AIGaInAs Graded-Composition Layers
001A69 (2003-10-01) Improving the Performance of AlGaInP Laser Diode by Oxide Annealing
001A87 (2003-07-01) AlGaInP Light Emitting Diode with a Modulation-Doped Superlattice
001C78 (2002-06-15) Effect of InGaP Barrier Thickness on the Performance of 1.3-μm InAsP/InP/InGaP Strain-Compensated Multiple-Quantum-Well Laser Diodes
001C95 (2002-04) Fe-Diffusion-Induced Defects in InP Annealed in Iron Phosphide Ambient
001E18 (2001-12) Deep Hole Traps Created by Gamma-Ray Irradiation of GaInP
001E19 (2001-12) Correlation of Photoreflectance Spectra with Performance of GaInP/GaAs Heterojunction Bipolar Transistors
001E20 (2001-12) Comparison of InGaP/InGaAs/GaAs and InGaP/InGaAs/AlGaAs Pseudomorphic High Electron Mobility Transistors
001E33 (2001-09-15) Gamma-Ray Induced Deep Electron Traps in GaInP
001E39 (2001-08-15) Thermal-Treatment Induced Deep Electron Traps in AlInP
001E43 (2001-06-15) High-Power 1.5 μm InGaAsP/InP Strained Quantum Wells Integrated Superluminescent Light Source with Tilted Structure
001E44 (2001-06-15) Direct-Gap Reduction and Valence-Band Splitting of Ordered Indirect-Gap AlInP2 Studied by Polarized Piezoreflectance
001E68 (2001-02-15) Phosphorus-Species-Induced Band-Gap Anomaly in InGaP Grown by Solid-Source Molecular-Beam Epitaxy
001E74 (2001-01-15) Temperature Dependence of Gate Current and Breakdown Behaviors in an n+-GaAs/p+-InGaP/n--GaAs High-Barrier Gate Field-Effect Transistor
001E75 (2001-01-15) An Improved In0.34Al0.66As0.85Sb0.15/InP Heterostructure Utilizing Coupled δ-Doping InP Channel
001F89 (2000-11-15) Theoretical Analysis of Polarization Insensitive InGaAsP Multiple-Quantum-Wells Eletroabsorption Modulators with Negative Chirp
001F98 (2000-10) InP (110) by Time-resolved XPS
002005 (2000-08-01) Anomalous Phosphorus Cracker Temperature-Dependent Photoluminescence Spectra of InGaP Grown by Solid Source Molecular Beam Epitaxy
002011 (2000-06-15) Phosphorus Vacancy as a Deep Level in AlInP Layers
002019 (2000-05-15) Ga0.5In0.5P Barrier Layer for Wet Oxidation of AlAs

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Chine/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/KwdEn.i -k "Phosphorus compounds" 

HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/KwdEn.i  \
                -Sk "Phosphorus compounds" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Chine/Analysis/biblio.hfd

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Chine
   |étape=   Analysis
   |type=    indexItem
   |index=    KwdEn.i
   |clé=    Phosphorus compounds
}}
Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024