Output impedance < Output power < Output voltage

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 50.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000024 (2014)		Improved performance of lateral GaN-based light emitting diodes with novel buried CBL structure in ITO film and reflective electrodes
000073 (2013)		Theoretical analysis of the inter-diffusion coefficients in the AlGaInP material quantum well intermixing
000195 (2013)		Investigation of blue InGaN light-emitting diodes with p-AlGaN/InGaN superlattice interlayer
000263 (2013)		Enhanced output power of (indium) gallium nitride light emitting diodes by a transparent current spreading-film composed of a disordered network of indium tin oxide nanorods
000273 (2013)		Efficiency droop improvement for InGaN-based light-emitting diodes with gradually increased In-composition across the active region
000500 (2012)		Improving Light Output of Vertical-Stand-Type InGaN Light-Emitting Diodes Grown on a Free-Standing GaN Substrate With Self-Assembled Conical Arrays
000730 (2011)		Quantum dot lasers grown by gas source molecular-beam epitaxy
000740 (2011)		Preparation and properties of Ni/InGaN/GaN Schottky barrier photovoltaic cells
000815 (2011)		InGaAs/GaAs saturable absorber for diode-pumped passively Q-switched mode-locking of Tm,Ho:YVO4 laser
000831 (2011)		High-power 1.25 μm InAs QD VECSEL based on resonant periodic gain structure
000B12 (2010)		Investigation on multiple-port microcylinder lasers based on coupled modes
000B15 (2010)		Intracavity Second Harmonic Generation Characteristics of Semiconductor Disk Laser
000B28 (2010)		Improved light extraction of GaN-based light-emitting diodes by ITO patterning with optimization design
000B55 (2010)		Fabrication of blue and green non-polar InGaN/GaN multiple quantum well light-emitting diodes on LiAIO2(100) substrates
000D44 (2009)		Room temperature continuous-wave electrically-injected InGaAsP triangle and square microlasers
000E24 (2009)		Influence of a p-InGaN/GaN short-period superlattice on the performance of GaN-based light-emitting diodes
000E41 (2009)		High-Power Passively Q-Switched Mode-Locking Nd:GdVO4 Laser with LT-InGaAs Saturable Absorber
000E43 (2009)		High efficiency passively Q-switched mode-locking Nd:GdV04 laser with LT-In0.25Ga0.75As saturable absorber
000E75 (2009)		Fabrication and modulation characteristics of 1.3 μm p-doped InAs quantum dot vertical cavity surface emitting lasers
000E77 (2009)		Fabrication and Characterization of 1.3-μm InAs Quantum-Dot VCSELs and Monolithic VCSEL Arrays
000F18 (2009)		Diode-pumped passively mode-locked Nd:LuVO4 laser with LT-In0.25Ga0.75As saturable absorber

---

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Chine/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/KwdEn.i -k "Output power" 

HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/KwdEn.i  \
                -Sk "Output power" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Chine/Analysis/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Chine
   |étape=   Analysis
   |type=    indexItem
   |index=    KwdEn.i
   |clé=    Output power
}}

---

This area was generated with Dilib version V0.5.77. Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024