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Optoelectronic device < Optoelectronic devices < Optoelectronic properties  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 35.
[0-20] [0 - 20][0 - 35][20-34][20-40]
Ident.Authors (with country if any)Title
000113 (2013) Single InAs Quantum Dot Grown at the Junction of Branched Gold-Free GaAs Nanowire
000161 (2013) Optical and structural studies of dual wavelength InGaN/GaN tunnel-injection light emitting diodes grown by metalorganic chemical vapor deposition
000271 (2013) Efficient quantum dot light-emitting diodes with solution-processable molybdenum oxide as the anode buffer layer
000296 (2013) Dependence of the optoelectronic properties of selenium-hyperdoped silicon on the annealing temperature
000320 (2013) Band Edge Modulation and Light Emission in InGaN Nanowires Due to the Surface State and Microscopic Indium Distribution
000336 (2013) A novel dimesitylboron-substituted indolo[3,2-b]carbazole derivative: Synthesis, electrochemical, photoluminescent and electroluminescent properties
000525 (2012) Formation Mechanism and Optical Properties of InAs Quantum Dots on the Surface of GaAs Nanowires
000640 (2012) A comparative study of ZnO film and nanorods for ZnO/polyfluorene inorganic/ organic hybrid junction
000659 (2011) Top Transmission Grating GaN LED Simulations for Light Extraction Improvement
000745 (2011) Polarized GaN-based light-emitting diode with an embedded metallic/dielectric subwavelength grating
000749 (2011) Photoelectron Characteristics of HgInTe Detector
000842 (2011) Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition
000852 (2011) First-principles study of InAs, InxGa1-xSb nanotubes and InAs/InxGa1-xSb nanotube superlattices
000946 (2011) Analysis and research on the thermal stress of detector affected by packaging accuracy
000947 (2011) Analysis and Design of a Low Noise ROIC for Hybrid InGaAs Infrared FPA
000970 (2011) A Novel 512×8 ROIC with Time-Delayed-Integration for MW Infrared Focal Plane Array
000A50 (2010) Scanning capacitance microscopy characterization on diffused p-n junctions of InGaAs/InP infrared detectors
000B06 (2010) Large blue shift of the absorption edge in modified potential InGaAs/InAIAs coupled quantum wells
000B25 (2010) InGaAs detector arrays hermetic encapsulation technology
000C32 (2010) An InP based wide gain spectrum asymmetric quantum wells for large scale optoelectronic monolithic integration
000C51 (2010) 1.54-μm electroluminescence from Si-rich erbium silicate

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